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El. knyga: Nanoscale Electronic Devices and Their Applications [Taylor & Francis e-book]

(Department of Physics, S. P. College, Cluster University Campus, Cluster University, Srinagar, INDIA),
  • Formatas: 219 pages, 22 Tables, black and white; 110 Illustrations, black and white
  • Išleidimo metai: 31-Jul-2020
  • Leidėjas: CRC Press
  • ISBN-13: 9780367808624
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  • Taylor & Francis e-book
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Nanoscale Electronic Devices and Their ApplicationsDidesnis paveikslėlis
  • Formatas: 219 pages, 22 Tables, black and white; 110 Illustrations, black and white
  • Išleidimo metai: 31-Jul-2020
  • Leidėjas: CRC Press
  • ISBN-13: 9780367808624
Kitos knygos pagal šią temą:
Taylor & Francis e-booksMore info about Taylor & Francis e-books
Partnerių interneto svetainė: https://www.taylorfrancis.com/books/9780367808624

Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:

  • ? Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices
  • ? Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs
  • ? Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices
  • ? Includes rigorous mathematical derivations of the semiconductor physics
  • ? Illustrates major concepts thorough discussions and various diagrams

Preface ix
Acknowledgments xiii
Authors xv
Chapter 1 Fundamentals of Nanoscale Electronic Devices
1(42)
1.1 Introduction
1(1)
1.2 Free Electron Theory and Quantum Theory
2(6)
1.2.1 Free Electron Theory
2(1)
1.2.2 Quantum Theory
3(5)
1.3 Origin of Bandgap in Solids
8(6)
1.3.1 Nearly Free Electron Model
8(4)
1.3.2 Approximate Measure of Band Gap
12(1)
1.3.3 Effective Mass Approximation
13(1)
1.4 Tight Binding Approximation
14(3)
1.5 Low-Dimensional Materials
17(1)
1.6 Quantum Confinement in Low-Dimensional Materials
18(7)
1.6.1 Particle Confinement in a Quantum Well
20(1)
1.6.2 Particle Confinement in a Quantum Wire
21(3)
1.6.3 Particle Confinement in a Quantum Dot
24(1)
1.7 Density of States in Bulk Materials
25(2)
1.8 Density of States in 2D, 1D, and 0D Materials
27(6)
1.8.1 Density of States in 2D Materials
27(3)
1.8.2 Density of States in 1D Systems
30(2)
1.8.3 Density of States in 0D Systems
32(1)
1.9 Examples of 0D, 1D, and 2D Materials
33(3)
1.9.1 Sem iconductor Nanostructures
34(1)
1.9.2 Metallic Nanostructures
34(1)
1.9.3 Carbon Nanostructures
35(1)
1.10 Non-Equilibrium Green's Function (NEGF)
36(2)
1.11 Density Functional Theory
38(3)
1.11.1 Advantages of DFT
41(1)
1.12 Summary
41(1)
References
42(1)
Chapter 2 Carbon Nanotubes and Their Device Applications
43(18)
2.1 Introduction
43(2)
2.2 Physical Properties of Carbon Nanotubes
45(2)
2.3 Ballistic Transport and Quantum Conductance in CNTs
47(2)
2.4 CNT Two-Probe Devices
49(1)
2.5 CNT Field-Effect Transistors (CNTFETs)
50(1)
2.6 CNT Logic Gates
51(2)
2.7 CNT Sensors
53(2)
2.8 CNT Photodetectors and Photoresistors
55(1)
2.9 CNT Interconnects
55(2)
2.10 CNT Memories
57(1)
2.11 Summary
58(1)
References
58(3)
Chapter 3 Electronic Transport Properties of Doped Carbon Nanotube Devices
61(18)
3.1 Introduction
61(2)
3.2 Doping Methods and Techniques
63(2)
3.3 Transport Properties of Two-Probe CNT Devices
65(1)
3.4 Effects of Doping on Electronic Transport Properties of Two-Probe CNT Systems
66(2)
3.5 Negative Differential Resistance (NDR) in CNTFETs and CNTMOSFETs
68(2)
3.6 NDR in Chromium-Doped Single-Walled Carbon Nanotube Devices
70(2)
3.7 Comparative Study of Conventional and Electrical Doping in CNT Devices
72(2)
3.8 Transport Properties of CNT Bio-Molecule Sensors
74(1)
3.9 Summary
75(1)
References
76(3)
Chapter 4 Field-Effect Transistors Based on Graphene and Other Popular Two-Dimensional Materials
79(16)
4.1 Introduction
79(1)
4.2 Graphene Field-Effect Transistors (GFETs)
80(2)
4.3 Molybdenum Disulfide Field-Effect Transistors (MoS2-FETs)
82(1)
4.4 Molybdenum Diselenide Field-Effect Transistors (MoSe-FETs)
83(1)
4.5 Tungsten Disulfide Field-Effect Transistors (WS2-FETs)
84(1)
4.6 Silicene and Germanene Field-Effect Transistors
85(4)
4.6.1 Dual-Gated Silicene FET
87(1)
4.6.2 Alkali-Adsorbed Silicene-Based FET
87(1)
4.6.3 Silicene Nanomesh FET
88(1)
4.6.4 Silicene Nanoribbon FET
88(1)
4.6.5 Li-Cl Co-Decorated Sub-10-nm Silicene Nanoribbon FET
88(1)
4.6.6 Silicene Tunnel FET
89(1)
4.7 Summary
89(1)
References
90(5)
Chapter 5 Gate and Channel Engineered Nanoscale Electronic Devices
95(26)
5.1 Introduction to Nanoscale Devices
95(3)
5.1.1 Electrostatic Effects
97(1)
5.1.2 Threshold Voltage Roll-Off
97(1)
5.1.3 Leakage Currents
98(1)
5.1.3.1 Gate Leakage Current
98(1)
5.1.3.2 Subthreshold Leakage Current
98(1)
5.1.3.3 Junction Leakage Current
98(1)
5.2 Non-Conventional Solutions to Miniaturization Problems
98(3)
5.2.1 Silicon-On-Insulator
98(1)
5.2.2 Multigate MOSFET
99(1)
5.2.2.1 Double-Gate (DG) MOSFET
100(1)
5.2.2.2 Trigate (TG) MOSFET
100(1)
5.2.2.3 Gate-All-Around (GAA) MOSFET
101(1)
5.3 Gate and Channel Engineering Techniques
101(2)
5.3.1 Gate-Oxide Stack
101(1)
5.3.2 Gate Metal Work Function Engineering
102(1)
5.3.3 Channel Engineering
103(1)
5.3.4 Strained Layer
103(1)
5.4 Multigate Multi-Material MOSFET
103(6)
5.5 Multigate Multi-Material Tunnel FET
109(8)
5.6 Summary
117(1)
References
118(3)
Chapter 6 Spin Nanoscale Electronic Devices and Their Applications
121(34)
6.1 Introduction to Spintronics
121(4)
6.1.1 Giant Magnetoresistance (GMR) and Its Applications
122(1)
6.1.2 Tunnel Magnetoresistance (TMR) and Its Applications
123(1)
6.1.3 Spin Injection Efficiency
124(1)
6.2 Spin Devices
125(26)
6.2.1 Magnetic Tunnel Junction (MTJ)
125(2)
6.2.1.1 Switching Mechanism in MTJ
127(3)
6.2.1.2 MTJ Models, Design, and Simulation
130(2)
6.2.1.3 Logic-In Memory Architecture
132(7)
6.2.2 Spin Field-Effect Transistor
139(8)
6.2.2.1 Multi-Gate Spin Field-Effect Transistor
147(1)
6.2.2.2 Spin-FET-Based Logic Design
148(1)
6.2.2.3 Spin-FET-Based Reconfigurable Logic Design
148(3)
6.3 Summary
151(2)
References
153(2)
Chapter 7 Phase-Change Devices and Their Applications
155(50)
7.1 Introduction
155(2)
7.2 Phase-Change Memory (PCM)
157(15)
7.2.1 Overview of Phase-Change Material Properties and Chalcogenide Materials for PCM
158(3)
7.2.2 Scaling of Phase-Change Memory Devices
161(4)
7.2.3 PCM Device Architecture
165(3)
7.2.4 PCM-Based Logic Gate Design
168(1)
7.2.4.1 OR Gate Design Using PCM Logic
168(2)
7.2.4.2 NOR Gate Design Using PCM Logic
170(2)
7.3 Memristor
172(13)
7.3.1 Memristive Devices: Switching Effects, Modeling, and Applications
177(1)
7.3.2 Silicon Nanowire-Based Memristive Devices
178(3)
7.3.3 Memristor-Based Logic Design
181(4)
7.4 Resistive Random-Access Memory (RRAM)
185(14)
7.4.1 Physical Structure of RRAM
185(2)
7.4.2 Resistance Switching Materials
187(1)
7.4.3 Resistance Switching Modes
188(1)
7.4.4 Resistive Switching Mechanism
189(2)
7.4.5 Performance Metrics of Resistive Random-Access Memory (RRAM)
191(1)
7.4.5.1 Write Operation
191(1)
7.4.5.2 Read Operation
191(1)
7.4.5.3 Resistance Ratio
191(1)
7.4.5.4 Endurance
192(1)
7.4.5.5 Retention
192(1)
7.4.5.6 Uniformity
192(1)
7.4.5.7 Effect of Operating Temperature and Random Telegraph Noise
193(1)
7.4.6 RRAM-Based Non-Volatile Memory (NVM) Design
193(6)
7.5 Summary
199(1)
References
199(6)
Index 205
Khurshed Ahmad Shah is presently working as Assistant Professor, Department of Physics, S. P. College, Cluster University Srinagar, J&K, India. He did his Doctorate in Physics from Jamia Millia Islamia, Central University, New Delhi, India, and Master of Philosophy through University of Kashmir, Srinagar, India. Dr. Shah has the privilege to work with renowned Scientists Prof. C. N. R Rao in the year 2016, 2017 and 2018. He has co-authored four books and published good number of research papers in National and International peer reviewed journals including Elsevier and Springer journals. Besides has presented his research work in many National and International Conferences. He has successfully handled three National level major research projects as Principal Investigator and under these projects has established two research laboratories. The awards in his name include Indian National Science Academy Visiting Scientist Fellowship 2019-20, J&K State Innovative Science Teacher Award- 2013, Jawahar-Lal Memorial Fellowship for Doctorial Studies-2006 and topped at the National level, Young Scientist Fellowship-2010, besides awarded many prizes in various competitions organized by Department of Science & Technology. Dr. Shah is editorial board member and reviewer of many scientific journals besides he is member of many scientific and academic associations. He has delivered number of extension lectures in the frontier area of Science and Technology- Nanotechnology at state and national level and gave coaching to students for competitive examinations.

Farooq Ahmad Khanday received M. Sc., M. Phil. and Ph.D. Degrees from the University of Kashmir, India in the year 2004, 2010 and 2013 respectively. He joined the Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar, India as Assistant Professor in May, 2010. His research interest includes Nano-Electronics, Low-voltage Analog integrated circuit design, Fractional-order Circuits Neuromorphic Computing, Stochastic Computing and Biomedical Circuit Design. He is author or co-author of more than 80 publications in peer reviewed indexed International and National journals/conferences of repute and two book chapters. He is the Management Committee (MC) observer of the COST Action CA15225 (Fractional-order Systems) of European Union. Besides, he is the member of several profession societies and serving as a reviewer for many International and National scientific journals in Electronics. He has successfully guided two Ph. D scholars and currently seven Ph. D. scholars are under his supervision. Furthermore, he has completed two research projects as Principal Investigator besides one major research project is ongoing under his guidance to the tune of ~Rs. 54 Lacs funded by SERB-DST, Govt. of India, under EMR scheme.
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