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Bands and Photons in III-V Semiconductor Quantum Structures [Kietas viršelis]

(Research Physicist, Quantum Electronics Section, Naval Research Laboratory), (Navy Senior Scientist for Quantum Electronics (ST), (Senior Research Scientist, The George Washington University and Contractor, US Naval Research Laboratory)
  • Formatas: Hardback, 688 pages, aukštis x plotis x storis: 254x177x40 mm, weight: 1430 g, 358 line drawings and halftones
  • Serija: Series on Semiconductor Science and Technology 25
  • Išleidimo metai: 10-Dec-2020
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198767277
  • ISBN-13: 9780198767275
Kitos knygos pagal šią temą:
Bands and Photons in III-V Semiconductor Quantum StructuresDidesnis paveikslėlis
  • Formatas: Hardback, 688 pages, aukštis x plotis x storis: 254x177x40 mm, weight: 1430 g, 358 line drawings and halftones
  • Serija: Series on Semiconductor Science and Technology 25
  • Išleidimo metai: 10-Dec-2020
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198767277
  • ISBN-13: 9780198767275
Kitos knygos pagal šią temą:
Pastovi nuoroda: https://www.kriso.lt/db/9780198767275.html
Raktažodžiai:
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books have taken on this task in the past, but their treatments tend either to pluck results from the literature and present them as received truths or to rely on unrealistically simple models.

Bands and Photons in III-V Semiconductor Quantum Structures takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader would not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research in those fields.

The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader's understanding.

Recenzijos

the authors carefully explain their motivation and methodology for preparing this magisterial treatment of band structure in the technologically important IIIV semiconductor material system. Their motivation to clearly explain the underlying principles shines through the well-written and well-illustrated text . . . this volume will be a crucial reference point for present and future generations of researchers and technologists. * K. Alan Shore, Bangor University, School of Electronic Engineering, Wales, Optics and Photonics News * This book, by a team of authors of profound expertise, will be highly appreciated by a wide audience in both research and development. * Udo W. Pohl, Technical University of Berlin * This book will do very well and have a wide readership from physics, electrical engineering, materials science, and will also be of immediate interest to professionals working in industry. * L. Ramdas Ram-Mohan, Worcester Polytechnic Institute *

Preface xi
Acknowledgments xiii
Part I Band Structure and Interband Optical Transitions in Bulk Semiconductors
1 Basics of Crystal Structure and Band Structure
3(26)
1.1 1D and 2D Crystals
3(3)
1.2 3D Crystal Structure
6(8)
1.3 Origin of the Bands
14(8)
1.4 Carrier Occupation and Statistics
22(7)
2 Introduction to k·p Theory
29(26)
2.1 Coupled Conduction and Valence Bands
29(8)
2.2 Spin-Orbit Coupling
37(9)
2.3 Kane's Model
46(9)
3 Detailed k·p Theory for Bulk III--V Semiconductors
55(38)
3.1 Valence-Band Hamiltonian with Contributions from Remote Bands
55(12)
3.2 Meaning of the Terms in the Second-Order Hamiltonian
67(6)
3.3 Simplified Forms of the Hamiltonian
73(5)
3.4 Inclusion of Strain Effects
78(6)
3.5 Bulk Band Structure of Wurtzite Semiconductors
84(9)
4 Absorption and Emission of Light in III--V Semiconductors
93(46)
4.1 Propagating Light and Interband Electronic Transitions
93(7)
4.2 Simplified Treatment of the Bulk Absorption Coefficient
100(8)
4.3 Detailed Evaluation of the Absorption Coefficient
108(6)
4.4 Optical Gain and Radiative Recombination
114(19)
4.5 Excitonic Optical Effects
133(6)
5 Other Techniques for Calculating Semiconductor Band Structure
139(32)
5.1 Basics of the Tight-Binding Method
139(8)
5.2 Effective Bond-Orbital Method
147(8)
5.3 Second-Nearest-Neighbor Tight-Binding Method
155(6)
5.4 The Empirical Pseudopotential Method
161(10)
Part II Band Parameters
6 Binary Compound Semiconductors
171(26)
6.1 Introduction
171(2)
6.2 Zinc-Blende Non-nitride Compounds
173(11)
6.3 Tight-Binding and Pseudopotential Parameters for the III--V Binary Compounds
184(2)
6.4 III--N Binary Compounds
186(11)
7 Alloys and Exotic Materials
197(42)
7.1 Interpolation Approach for Ternaries
197(4)
7.2 Recommended Bowing Parameters for the III--V Ternary Alloys
201(9)
7.3 Bowing Parameters for the III--N Ternary Alloys
210(3)
7.4 Quaternary Alloys
213(3)
7.5 Dilute Nitrides
216(4)
7.6 Dilute Bismides
220(3)
7.7 Boron Nitride
223(3)
7.8 Optical Properties of Alloys
226(13)
Part III Band Structure and Optical Transitions in Quantum Structures
8 Basics of Envelope-Function Theory
239(32)
8.1 From Bulk to Quantum-Layer Hamiltonian
239(7)
8.2 Examples of Hamiltonians in Quantum Structures
246(10)
8.3 Additional Interface Terms
256(3)
8.4 Spin Splitting
259(6)
8.5 Boundary Conditions for Quantum Structures
265(6)
9 Methods for Computing the States of Quantum Structures
271(32)
9.1 Transfer-Matrix Method
271(4)
9.2 Finite-Difference Method
275(7)
9.3 Reciprocal-Space Method
282(6)
9.4 Problem of Spurious States
288(5)
9.5 Tight-Binding and Pseudopotential Methods Applied to Quantum Structures
293(10)
10 Superlattice and Quantum-Well Band Structure
303(40)
10.1 Multiband Description of Quantum Wells
303(10)
10.2 Coupled Quantum Wells and Superlattices
313(8)
10.3 Quantum Structures in Electric Fields
321(3)
10.4 Coupled Conduction and Valence Bands in Quantum Wells
324(6)
10.5 Wurtzite Quantum Wells
330(6)
10.6 Quantum Wires and Quantum Dots
336(7)
11 Absorption and Emission of Light in Quantum Structures
343(78)
11.1 Interband Transitions in Quantum Wells
343(7)
11.2 Intersubband Transitions
350(18)
11.3 Interband Absorption in Quantum Wells and Superlattices
368(9)
11.4 Optical Gain in Quantum Wells and Superlattices
377(11)
11.5 Absorption and Gain in Wurtzite Quantum Wells
388(3)
11.6 Radiative Recombination in Quantum Wells
391(10)
11.7 Excitonic Effects in Quantum Wells
401(4)
11.8 Absorption, Gain, and Radiative Recombination in Quantum Wires and Dots
405(16)
Part IV Semiconductor Photonic Devices
12 Interband Semiconductor Lasers and LEDs
421(70)
12.1 A Whirlwind Tour of Semiconductor Lasers
421(15)
12.2 Radiative and Nonradiative Recombination Processes in Semiconductor Lasers
436(13)
12.3 High-Speed Modulation and Linewidth
449(8)
12.4 Interband Cascade Lasers
457(12)
12.5 Blue, Green, and Ultraviolet Nitride Lasers
469(3)
12.6 Quantum-Dot Lasers
472(4)
12.7 Light-Emitting Diodes and Devices
476(7)
12.8 Semiconductor Optical Amplifiers and High-Brightness Sources
483(8)
13 Quantum Cascade Lasers
491(36)
13.1 Hierarchy of Intersubband Models
491(4)
13.2 Quantum Cascade Lasers
495(18)
13.3 Comparing Different Classes of Mid-Infrared Lasers
513(7)
13.4 Mode-Locked Lasers and Laser Frequency Combs
520(7)
14 Semiconductor Photodetectors
527(58)
14.1 Photoconductive Detectors
527(5)
14.2 Photovoltaic Detectors
532(14)
14.3 Majority-Carrier Barrier Structures
546(9)
14.4 Comparison of Bulk and Type II Superlattice IR Detectors
555(9)
14.5 Interband Cascade Detectors
564(5)
14.6 Quantum-Well Infrared Photodetectors and Quantum Cascade Detectors
569(4)
14.7 Resonant-Cavity and Waveguide-Enhanced Detectors
573(6)
14.8 Novel Photodetector Structures and High-Speed Operation
579(6)
15 Solar Cells, Thermophotovoltaics, and Nonlinear Devices Based on Quantum Wells
585(32)
15.1 Basics of Solar Cells
585(10)
15.2 Advanced Solar-Cell Concepts
595(4)
15.3 Thermophotovoltaic Devices
599(3)
15.4 Basics of Nonlinear Optics in Quantum Wells
602(8)
15.5 Quantum-Well and Quantum-Cascade Nonlinear Devices
610(7)
Appendix A Physical Constants, Units, and Other Useful Physical Relations 617(8)
Appendix B Hole Effective Masses for Wurtzite Materials 625(2)
Appendix C Loehr's Parametrization of the Second-Nearest-Neighbor EBOM 627(2)
Appendix D Table of Optical Parameters for Bulk III--V Semiconductors 629(36)
Index 665
Dr. Igor Vurgaftman received the Ph. D. degree in electrical engineering from the University of Michigan. Since 1995 he has been with the Optical Sciences Division of the Naval Research Laboratory (NRL), where he is currently Head of the Quantum Optoelectronics Section. He is the author of more than 280 refereed articles in technical journals, cited more than 14,000 times (h-index of 46) as well as more than 20 patents. Dr. Vurgaftman is a Fellow of the American Physical Society and the Optical Society.

Dr. Matthew Lumb received a Ph.D in Physics from Imperial College London in 2009. He was then appointed as lead device modeler for QuantaSol Ltd., manufacturing state of the art, multi-junction solar cells using strain-balanced quantum wells. In 2011, Dr. Lumb joined The George Washington University, based full time at the Naval Research Laboratory, in Washington DC, researching numerous aspects of optoelectronic devices, including high efficiency, multi-junction solar cells. He is currently principal investigator on an ARPA-E MOSAIC award, developing novel concentrator photovoltaic (CPV) arrays using micro-CPV cells. He has authored and co-authored over 120 journal articles and conference papers and holds 2 patents.

Dr. Jerry Meyer received the Ph.D. in Physics from Brown University in 1977. Since then he has carried out basic and applied research at the U.S. Naval Research Laboratory, where he is Navy Senior Scientist for Quantum Electronics. His research has focused on semiconductor optoelectronic materials and devices, especially new classes of semiconductor lasers and detectors for the infrared. He is a recipient of the Presidential Rank Award (2016), ONR's Captain Robert Dexter Conrad Award for Scientific Achievement (2015), NRL's E. O. Hulbert Annual Science Award (2012), the IEEE Photonics Society Engineering Achievement Award (2012), the Dr. Dolores M. Etter Top Navy Scientists and Engineers of the Year Award (2008), and the NRL Edison Chapter Sigma Xi Award for Pure Science (2003). He has co-authored 390 refereed journal articles that have been cited more than 24,000 times (H-Index of 63), 37 patents, and 180 Invited, Plenary, Keynote, and Tutorial conference presentations.