| Preface |
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| Message from New General Chair |
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| Committee |
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vii | |
| Acknowledgements |
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viii | |
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Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography |
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3 | (4) |
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Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography |
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7 | (4) |
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Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy |
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11 | (4) |
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Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers |
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15 | (4) |
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Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide |
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19 | (4) |
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Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing |
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23 | (4) |
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Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings |
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27 | (4) |
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Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method |
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31 | (4) |
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Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC |
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35 | (6) |
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Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers |
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41 | (4) |
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Different Dissociation Behavior of [ 11-20] and Non-[ 11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation |
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45 | (4) |
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Density of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas |
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49 | (4) |
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Defect Related Leakage Current Components in SiC Schottky Barrier Diode |
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53 | (4) |
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Rapid Terahertz Imaging of Carrier Density of 3C-SiC |
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57 | (6) |
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Chapter 2 Nitride Materials and Devices |
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Cathodoluminescence Study of Ammonothermal GaN Crystals |
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63 | (4) |
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The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals |
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67 | (4) |
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Defect Propagation from 3C-SiC to III-Nitride |
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71 | (4) |
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Characterization of Dislocations in GaN Thin Film and GaN/AIN Multilayer |
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75 | (4) |
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Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs |
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79 | (6) |
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Chapter 3 III-V Compounds and Devices |
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Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography |
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85 | (4) |
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Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping |
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89 | (4) |
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Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal |
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93 | (4) |
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Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study |
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97 | (4) |
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Defect Propagation in Broad-Area Diode Lasers |
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101 | (4) |
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Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers |
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105 | (4) |
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Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves |
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109 | (6) |
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Chapter 4 Photovoltaics: From Material to Module |
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Lock-In Thermography and Related Topics in Photovoltaic Research |
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115 | (8) |
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Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si |
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123 | (6) |
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EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells |
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129 | (4) |
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Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique |
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133 | (4) |
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Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods |
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137 | (4) |
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Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon |
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141 | (4) |
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Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon |
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145 | (4) |
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High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells |
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149 | (4) |
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Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction |
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153 | (4) |
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Structural Study of Small Angle Grain Boundaries in Multicrystalline Si |
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157 | (4) |
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Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications |
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161 | (4) |
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Change of the Characterization Techniques as Progress of CuInSe2-Based Thin-Film PV Technology |
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165 | (6) |
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Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals |
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171 | (4) |
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Reduction of Crack Formation in Transcription of Cu(In, Ga)Se2 Thin Film Solar Cell Structure |
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175 | (4) |
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Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode |
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179 | (4) |
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2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module |
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183 | (4) |
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Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module |
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187 | (6) |
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Chapter 5 Group IV Materials: Defect, Impurity, and Nanostructure |
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Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers |
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193 | (6) |
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Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation |
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199 | (4) |
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Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects |
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203 | (6) |
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Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy |
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209 | (4) |
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DLTS Study of Pd-H Complexes in Si |
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213 | (4) |
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Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements |
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217 | (4) |
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Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities |
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221 | (6) |
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Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region |
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227 | (4) |
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Reliability Improvement in Silicon Dioxide |
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231 | (4) |
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Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs |
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235 | (4) |
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Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers |
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239 | (4) |
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Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100) |
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243 | (4) |
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Effect of Si3N4 Coating on Strain and Fracture of Si Ingots |
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247 | (4) |
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Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction |
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251 | (4) |
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MicroRaman Spectroscopy of Si Nanowires: Influence of Size |
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255 | (6) |
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Chapter 6 Functional Oxides and Other Materials |
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Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process |
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261 | (4) |
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Structural and Electronic Structure of SnO2 by the First-Principle Study |
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265 | (4) |
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XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method |
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269 | (4) |
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Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing |
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273 | (4) |
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Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution |
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277 | (4) |
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Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method |
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281 | (4) |
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Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide |
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285 | (4) |
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Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition |
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289 | (4) |
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| Keyword Index |
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293 | (4) |
| Author Index |
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297 | |
