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El. knyga: Doping of Carbon Nanotubes

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  • Formatas: EPUB+DRM
  • Serija: NanoScience and Technology
  • Išleidimo metai: 01-Jul-2017
  • Leidėjas: Springer International Publishing AG
  • Kalba: eng
  • ISBN-13: 9783319558837
Kitos knygos pagal šią temą:
Doping of Carbon NanotubesDidesnis paveikslėlis
  • Formatas: EPUB+DRM
  • Serija: NanoScience and Technology
  • Išleidimo metai: 01-Jul-2017
  • Leidėjas: Springer International Publishing AG
  • Kalba: eng
  • ISBN-13: 9783319558837
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This book addresses the control of electronic properties of carbon nanotubes. It presents thermodynamic calculations of the formation of impurities and defects in the interaction of nanotubes with hydrogen, oxygen, nitrogen and boron, based on theoretical models of the formation of defects in carbon nanotubes. It is shown that doping and adsorption lead to changes in the electronic structure of the tubes as well as to the appearance of impurity states in the HOMO-LUMO gap. The book presents examples of specific calculations for doping of carbon nanotubes with oxygen, hydrogen, nitrogen and boron, together with numerous experimental results and a comparison with the author"s thermodynamic calculations. Possible directions of the technological processes of optimization are pointed out, as well as the perspectives of p-n-transition creation with the help of carbon nanotube arrays.The results presented were derived from the physics of the processes and a theoretical model of the tec

hnological processes. Though a wealth of empirical information on doping nanotubes has been accumulated in the scientific literature, what is lacking is a theoretical model for their analysis. As such, the book develops a thermodynamic model of the self-organization of structural elements in multicomponent systems - including carbon nanotubes, clusters and precipitates in condensed matter - and subsequently adapts it to the doping of carbon nanotubes. This approach allows readers to gain a far deeper understanding of the processes of doping carbon nanotubes.

Adsorption and Doping as a Methods of the Carbon Nanotubes Electronic Properties Regulation.- Thermodynamics and Kinetics of Adsorption and Doping of Graphene Plane of Carbon Nanotubes and Grapheme.- Interaction of Hydrogen with Graphene Plane of Carbon Nanotubes and Grapheme.- Oxygen Interaction with Electronic Nanotubes.
1 Adsorption and Doping as Methods for the Electronic Regulation Properties of Carbon Nanotubes
1(6)
Alexandr Saurov
References
5(2)
2 Thermodynamics and Kinetics of Adsorption and Doping of a Graphene Plane of Carbon nanotubes and Graphene
7(50)
Sergey Bulyarskiy
Alexandr S. Basaev
2.1 The Equilibrium of Thermodynamic Systems
8(3)
2.2 Thermodynamic and Kinetic Approaches to the Description of Thermodynamic Systems
11(5)
2.2.1 Kinetics Equations
11(1)
2.2.2 Solutions of Equations of Physical Kinetics
12(1)
2.2.3 The Kinetic Coefficients
13(2)
2.2.4 Kinetic Processes in Carbon Nanostructures
15(1)
2.2.5 Role and Limits of the Thermodynamic Approach with Regard to the Process of Doping Carbon Nanostructures
15(1)
2.3 Description of Defect Formation in Crystals
16(3)
2.3.1 The Quasi-chemical Reaction Method
16(3)
2.3.2 The Gibbs Free Energy Search Minimum Method
19(1)
2.4 The Thermodynamics of Physical Adsorption of Carbon Nanotubes and Graphene
19(8)
2.4.1 Objects of Research: CNTs and Graphene
20(1)
2.4.2 Differences Between Physical and Chemical Adsorption
20(2)
2.4.3 The Conservation Law of Place Number
22(1)
2.4.4 The Laws of Conservation of Particle Number
23(1)
2.4.5 Free Energy of the Systems
23(4)
2.5 The Thermodynamics of Doping and Chemical Adsorption
27(6)
2.5.1 The Conservation Laws for the Number of Places
27(1)
2.5.2 The Conservation Laws of Particle Number
28(1)
2.5.3 The Conservation Law of Charge
28(5)
2.6 Kinetics of Doping Carbon Nanotubes and Graphene
33(2)
2.7 Kinetics of the Desorption Process
35(3)
2.8 The Thermodynamics and Kinetics of Chemical Vapor Deposition Growth of Carbon Nanotubes
38(16)
2.8.1 Catalyst Nanoparticles
39(1)
2.8.2 The Free Energy of the Particles
40(1)
2.8.3 The Laws of Conservation for the Number of Sites and Particles
41(1)
2.8.4 Calculation of the Cluster Size Distribution
42(4)
2.8.5 The Kinetics of the Growth of a Nanotube
46(1)
2.8.6 Some Experimental Results
47(1)
2.8.7 System of Kinetic Equations
48(6)
2.9 Conclusion
54(3)
References
55(2)
3 Interaction of Hydrogen with a Graphene Plane of Carbon Nanotubes and Graphene
57(46)
Sergey Bulyarskiy
Alexandr S. Basaev
Darya A. Bogdanova
3.1 Adsorption by Carbon Nanotubes as a Basis for Hydrogen Storage Technology
58(5)
3.2 Quantum Mechanical Calculations of Carbon Nanotube Adsorptive Characteristics
63(2)
3.3 Modeling of Single Carbon Nanotube Properties for the Processes of Hydrogen Adsorption
65(13)
3.4 Thermodynamic Evaluations for Limiting Hydrogen Adsorption by SWCNTs
78(5)
3.5 Hydrogen Desorption Kinetics (TGA)
83(3)
3.6 Experimental Studies of Hydrogen Adsorption on SWCNTs
86(5)
3.7 Modeling of a Nanotube with Stone--Wales Defects
91(2)
3.8 The Problem of Hydrogen Storage
93(3)
3.9 Conclusion
96(7)
References
96(7)
4 Oxygen Interaction with Electronic Nanotubes
103(12)
Sergey Bulyarskiy
Alexandr S. Basaev
Darya A. Bogdanova
Alexandr Pavlov
4.1 Simulation of the Oxygen Interaction with Electronic Nanotubes
103(5)
4.2 The Characteristic Parameters of Oxygen Adsorption
108(3)
4.3 Conclusion
111(4)
References
112(3)
5 Nitrogen Interaction with Carbon Nanotubes: Adsorption and Doping
115(56)
Alexandr Saurov
Sergey Bulyarskiy
Darya A. Bogdanova
Alexandr Pavlov
5.1 Nitrogen Arrangement on Carbon Nanotubes
116(3)
5.2 Determination of Nitrogen Atom Configuration on the Graphene Plane of a Carbon Nanotube
119(3)
5.3 Analysis of Atomic Configurations and Nitrogen Electronic States on Graphene Planes of CNTs by Quantum Mechanical Methods
122(2)
5.4 Simulation of Nitrogen Chemisorption on Single-Wall Carbon Nanotubes
124(3)
5.5 Nitrogen Chemisorption Simulation for Nanotubes with Stone-Wales Defects
127(3)
5.6 Thermodynamics of the Nitrogen Physical Adsorption Processes on Carbon Nanotubes
130(2)
5.7 Thermodynamics of Carbon Nanotube Doping by Nitrogen
132(12)
5.7.1 The Laws of Conservation of Place Number
135(1)
5.7.2 The Laws of Conservation of Particle Number
136(1)
5.7.3 The Law Charge Conservation
136(1)
5.7.4 Configuration Entropy of the System
136(8)
5.8 Calculations of Doped Carbon Nanotube Conductance
144(1)
5.9 Analysis of Thermogravimetric Curves of Carbon Nanotubes, Doped by Nitrogen
144(4)
5.10 Calculation of Nitrogen Fugacity Under Plasmochemical Synthesis
148(7)
5.10.1 The Place Number Conservation Laws
150(1)
5.10.2 The Particles Number Conservation Laws
150(1)
5.10.3 Charge Conservation Law
151(1)
5.10.4 Free Energy of the System
151(4)
5.11 Analysis of X-Ray Photoelectron Spectra of Nitrogen Doped Carbon Nanotubes
155(3)
5.12 Applications of Nitrogen Doped Carbon Nanotubes
158(2)
5.12.1 Improvement of Emissive Properties
158(1)
5.12.2 Electrodes for Ionic-Lithium Batteries
159(1)
5.13 Conclusion
160(11)
References
160(11)
6 Carbon Nanotube Doping by Acceptors. The p--n Junction Formation
171(12)
Alexandr Saurov
Sergey Bulyarskiy
Alexandr Pavlov
6.1 The Electronic Properties of Boron-Doped Nanotubes
171(1)
6.2 Technology and Thermodynamics of Boron-Doped Carbon Nanotubes
172(1)
6.3 Boron-Doped Carbon Nanotube Usage
173(1)
6.4 The p--n Junction Forming Carbon Nanotubes
174(6)
6.4.1 Features of p--n Junction Formation in Carbon Nanotubes by a Mutual Acceptors and Donor Doping
176(2)
6.4.2 Carbon Nanotube Arrays as a Volume Crystal Analog
178(1)
6.4.3 The Formation of a p--n Junction, Under Changing Temperatures, in a Nitrogen-Doped Carbon Nanotube Array
179(1)
6.4.4 Doping Admixture Change During the Growth Process
179(1)
6.4.5 Ionic Doping of an Array
179(1)
6.4.6 Carbon Nanotube Array Oxidation Under Ultraviolet Irradiation
180(1)
6.5 Summary
180(3)
References
181(2)
Conclusions 183(2)
Index 185
Sergey Bulyarskiy received his PhD in 1976 and his doctor of science degree in 1989, becoming a professor in 1990. From 1991 to 2014 he served as the vice-rector of Ulyanovsk State University, Russia, and Head of the Department. Since 2014 he has been the Head of the Laboratory of Microelectronics Nanotechnologies, an Institute of the Russian Academy of Sciences. He was elected a Corresponding Member of the Academy of Sciences of the Republic of Tatarstan and was awarded various science prizes in Russia. Prof. Bulyarskiy currently pursues research on the theoretical foundations of nanotechnologies and nanoelectronics, physics, nanoelectronic devices, diagnostic quality and reliability prediction. He has obtained important results on the development of thermodynamic and kinetic models for the self-organization of nanoelements in multicomponent systems of semiconductors and carbon. He is currently working at the Russian Academy of Sciences in Moscow, studying problems in carbon nanotubes and grapheme. S. Bulyarskiy directs the school of young scientists in Physical problems of nanotechnology, nanoelectronics components and microstructures and is Chairman of the Organizing Committee of the annual International Conference Opto-, nanoelectronics, nanotechnology and micro. He has authored more than 200 scientific papers and 20 monographs.





Alexander Saurov received his PhD in 1988 and his Doctor of Science degree in 1999, becoming a professor in 2001 and Corresponding Member of the Russian Academy of Sciences in 2008, elected a Full Member of the Russian Academy of Sciences in 2016. Since 2009 he has been the Director of the Institute of Microelectronics Nanotechnologies of the Russian Academy of Sciences (INME RAS), Moscow. A specialist for integral circuit, micro- and nanosystems, he has authored 161 scientific publications and holds 40 patents. Prof. Saurovs main findings concern: the development of technologies of ultra-small sizes of integrated structures, very-large-scale integration (VLSI) and microsystems on the basis of non-lithographic constructive-technological methods of autoshaping, technologies of self-aligned integrated transistor configurations and integrated microsensors, low-swirl injectors (LSIs) with ultra-low energy, and microsensors on the basis of silicon-carbon nanotechnologies. He is a senior editor of the journal Nanoindustry and a member of the editorial board of the magazine Microsystems engineering.
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