Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
Key Features
* Provides basic knowledge of ion implantation-induced defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools for processed semiconductors
* Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Daugiau informacijos
Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
LIST OF CONTRIBUTORS xi(2) FOREWORD xiii
Chapter 1 Ellipsometric Analysis 1(38) M. Fried T. Lohner J. Gyulai I. Introduction 1(2) II. Principle of Ellipsometry 3(1) III. General Remarks 4(3) IV. Optical Models 7(2) V. The Complex Dielectric Function 9(4) VI. Light Penetration 13(1) VII. Effective Medium Theory 13(2) VIII. Examples 15(12)
1. Gallium Arsenide 15(1)
2. Germanium 16(2)
3. Indium Phosphide 18(1)
4. Silicon 19(5)
5. Silicon-on-Insulator (SOI) Structures 24(2)
6. Separation by IMplantation of OXygen (SIMOX) 26(1)
7. Separation by IMplantation of Nitrogen (SIMNI) 27(1) IX. Sophisticated Multilayer Optical Models 27(4)
1. Profiles with Unknown Depth Variation 29(2)
2. Profiles with Known Depth Variation 31(1) X. Closing Remarks 31(3) References 34(5)
Chapter 2 Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors 39(34) Antonios Seas Constantinos Christofides I. Introduction 39(1) II. General Overview 40(7) III. Recent Optical Experimental Studies on Implanted Silicon 47(13)
1. Phosphorous-Implanted Silicon 47(2)
2. Fourier Transform Infrared Optical Measurements 49(11) IV. Theoretic Background 60(2) V. Discussion and Analysis 62(6)
1. Influence of Annealing Temperature on the Plasma Wavelength 62(5)
2. Effective Mass vs. Annealing Temperature 67(1) VI. Summary 68(1) References 69(4)
Chapter 3 Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing 73(42) Andreas Othonos Constantinos Christofides I. Introduction 73(1) II. Photoluminescence and Raman Scattering Theory 74(5)
1. Photoluminescence Theory 74(3)
2. Raman Scattering Theory 77(2) III. Photoluminescence and Raman Scattering Techniques 79(5)
1. Common Photoluminescence Techniques 79(1)
2. Raman Scattering Techniques 80(2)
3. Time-Resolved Measurements 82(2) IV. Characterization of Ion-Implanted Semiconductors 84(27)
1. Photoluminescence Experimental Studies 84(13)
2. Raman Studies on Ion-Implanted Semiconductors 97(14) V. Summary and Future Perspectives 111(1) References 112(3)
Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects 115(36) Constantinos Christofides I. Introduction 115(1) II. Photomodulated Thermoreflectance Theory 116(3)
1. Basic Photothermal Equations 116(2)
2. Three-Dimensional Diffusion 118(1) III. Experimental Methodology 119(3)
1. Room Temperature Measurements 119(2)
2. Measurements versus Temperature 121(1) IV. Experimental Results and Discussion 122(22)
1. Characterization of Implanted Wafers 122(4)
2. Influence of Annealing 126(10)
3. Temperature Influence on the Photothermal Signal 136(8) V. Recent Developments 144(2)
1. Single-Beam Thermowave Technique 144(1)
2. Extension to Two-Layer Model 145(1) VI. Summary and Future Perspectives 146(1) References 147(4)
Chapter 5 Photothermal Deflection Spectroscopy Characterization of Ion-Implanted and Annealed Silicon Films 151(28) U. Zammit I. Introduction 151(3) II. Theory and Experiment 154(4) III. Results and Discussion 158(16)
1. The Effect of Implantation Dose 158(8)
2. Effects of Annealing of Damaged Crystalline Material 166(1)
3. Effects of Annealing of Amorphous Material 167(7) IV. Conclusions 174(1) References 174(5)
Chapter 6 Photothermal Deep-Level Transient Spectroscopy of Impurities and Defects in Semiconductors 179(34) Andreas Mandelis Arief Budiman Miguel Vargas I. Introduction 179(2) II. Physical Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy 181(3) III. Theory of Photothermal Radiometric Deep-Level Transient Spectroscopy 184(4) IV. Instrumental Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy: The Lock-In Rate-Window Method 188(2) V. Experiment and Discussion 190(17)
1. Constant-Temperature Photothermal Radiometric Deep-Level Transient Spectroscopy of Silicon 191(7)
2. Constant Duty-Cycle Photothermal Radiometric Deep-Level Transient Spectroscopy of Semi-Insulating-Gallium Arsenide 198(9) VI. Potential for Ion-Implantation Diagnostics and Conclusions 207(2) References 209(4)
Chapter 7 Ion Implantation into Quantum-Well Structures 213(44) R. Kalish S. Charbonneau I. Introduction 213(3) II. General Background 216(14)
1. Ion-Implantation-Related Damage 217(3)
2. Annealing Ion-Implantation-Related Damage 220(1)
3. Evaluation of Structural Modifications 221(3)
4. Evaluation by Optical Techniques 224(6) III. Ion-Beam-Induced Modifications of QW Structures 230(18)
1. Point-Defect and Impurity-Induced Heterostructure Interdiffusion 231(1)
2. Threshold Dose for Intermixing of Quantum Wells: Size of Interface Area Affected by Individual Ion Tracks 232(5)
3. Intermixing of Interfaces Far Beyond the Ion Range: The Ion Channeling Effect 237(1)
4. Realization of Zero- and One-Dimensional Structures by the Use of Focused Ion-Beams (FIBs) 238(2)
5. Defect Diffusion in Ion-Implanted AIGaAs and InP Systems 240(7)
6. Implantation Temperature and Dose-Rate Dependence 247(1) IV. Future Trends and Applications 248(3) References 251(6)
Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors 257(38) Alexandre M. Myasnikov Nikolay N. Gerasimenko I. Introduction 257(1) II. Materials and Impurities 258(3)
1. Materials 258(2)
2. Impurities 260(1) III. Ion Implantation 261(18)
1. Range Statistics 261(3)
2. Ion Implantation Damage 264(2)
3. Ion Implantation Damage in Indium Arsenide 266(5)
4. Ion Implantation Damage in Indium Antimonide and Gallium Antimonide 271(1)
5. Swelling of Indium Antimonide and Gallium Antimonide 272(7) IV. Annealing 279(11)
1. Damage Annealing 279(1)
2. Capping Layers 279(2)
3. Capless Annealing 281(1)
4. Redistribution of Impurities During Annealing 281(9) V. Conclusion 290(1) References 291(4) INDEX 295(8) CONTENTS OF VOLUMES IN THIS SERIES 303
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Daugiau apie elektronines knygas