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Electrical Properties of Materials 9th Revised edition [Minkštas viršelis]

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(, Department of Electrical and Electronic Engineering, Imperial College, London), (, Department of Electrical and Electronic Engineering, Imperial College, London), (, Department of Engineering Science, University of Oxford)
  • Formatas: Paperback / softback, 512 pages, aukštis x plotis x storis: 247x189x25 mm, weight: 1114 g, 363 b/w illustrations
  • Išleidimo metai: 30-Jan-2014
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198702787
  • ISBN-13: 9780198702788
Kitos knygos pagal šią temą:
  • Formatas: Paperback / softback, 512 pages, aukštis x plotis x storis: 247x189x25 mm, weight: 1114 g, 363 b/w illustrations
  • Išleidimo metai: 30-Jan-2014
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198702787
  • ISBN-13: 9780198702788
Kitos knygos pagal šią temą:
An informal and highly accessible writing style, a simple treatment of mathematics, and clear guide to applications have made this book a classic text in electrical and electronic engineering. Students will find it both readable and comprehensive. The fundamental ideas relevant to the understanding of the electrical properties of materials are emphasized; in addition, topics are selected in order to explain the operation of devices having applications (or possible future applications) in engineering. The mathematics, kept deliberately to a minimum, is well within the grasp of a second-year student. This is achieved by choosing the simplest model that can display the essential properties of a phenomenom, and then examining the difference between the ideal and the actual behaviour.
The whole text is designed as an undergraduate course. However most individual sections are self contained and can be used as background reading in graduate courses, and for interested persons who want to explore advances in microelectronics, lasers, nanotechnology, and several other topics that impinge on modern life.

To request a copy of the Solutions Manual, visit http://global.oup.com/uk/academic/physics/admin/solutions.

Recenzijos

`Review from previous edition This book is a delight! It is impossible to read it without a smile coming to your lips every few pages. It is a new edition of a well-known undergraduate text, intended for students of electrical engineering, but I am sure any physics student could benefit from reading it ... It is an excellent educational book, and I am sure that it will achieve the aim of the authors, which is to instill a sense of quantum mechanical reasoning into all its readers.' High Temperatures - High Pressures `An informal and highly accessible writing style, a simple treatment of mathematics, and a clear guide to applications have made this book a classic text in electrical and electronic engineering. Students will find it both readable and comprehensive.' European Journal of Engineering Education

Data on specific materials in text xiii
Introduction xv
1 The electron as a particle
1.1 Introduction
1(1)
1.2 The effect of an electric field-conductivity and Ohm's law
2(2)
1.3 The hydrodynamic model of electron flow
4(1)
1.4 The Hall effect
5(1)
1.5 Electromagnetic waves in solids
6(7)
1.6 Waves in the presence of an applied magnetic field cyclotron resonance
13(3)
1.7 Plasma waves
16(3)
1.8 Johnson noise
19(2)
1.9 Heat
21(4)
Exercises
23(2)
2 The electron as a wave
2.1 Introduction
25(3)
2.2 The electron microscope
28(1)
2.3 Some properties of waves
29(2)
2.4 Applications to electrons
31(2)
2.5 Two analogies
33(3)
Exercises
34(2)
3 The electron
3.1 Introduction
36(2)
3.2 Schrodinger's equation
38(1)
3.3 Solutions of Schrodinger's equation
39(1)
3.4 The electron as a wave
40(1)
3.5 The electron as a particle
41(1)
3.6 The electron meeting a potential barrier
41(3)
3.7 Two analogies
44(1)
3.8 The electron in a potential well
45(2)
3.9 The potential well with a rigid wall
47(1)
3.10 The uncertainty relationship
47(1)
3.11 Philosophical implications
48(5)
Exercises
50(3)
4 The hydrogen atom and the periodic table
4.1 The hydrogen atom
53(5)
4.2 Quantum numbers
58(1)
4.3 Electron spin and Pauli's exclusion principle
59(1)
4.4 The periodic table
59(7)
Exercises
64(2)
5 Bonds
5.1 Introduction
66(1)
5.2 General mechanical properties of bonds
67(2)
5.3 Bond types
69(6)
5.3.1 Ionic bonds
69(1)
5.3.2 Metallic bonds
70(1)
5.3.3 The covalent bond
70(3)
5.3.4 The van der Waals bond
73(1)
5.3.5 Mixed bonds
74(1)
5.3.6 Carbon again
74(1)
5.4 Feynman's coupled mode approach
75(5)
5.5 Nuclear forces
80(1)
5.6 The hydrogen molecule
81(1)
5.7 An analogy
82(2)
Exercises
82(2)
6 The free electron theory of metals
6.1 Free electrons
84(1)
6.2 The density of states and the Fermi-Dirac distribution
85(3)
6.3 The specific heat of electrons
88(1)
6.4 The work function
89(1)
6.5 Thermionic emission
89(3)
6.6 The Schottky effect
92(3)
6.7 Field emission
95(1)
6.8 The field-emission microscope
95(2)
6.9 The photoelectric effect
97(1)
6.10 Quartz-halogen lamps
97(1)
6.11 The junction between two metals
98(3)
Exercises
99(2)
7 The band theory of solids
7.1 Introduction
101(1)
7.2 The Kronig-Penney model
102(4)
7.3 The Ziman model
106(3)
7.4 The Feynman model
109(3)
7.5 The effective mass
112(2)
7.6 The effective number of free electrons
114(1)
7.7 The number of possible states per band
115(2)
7.8 Metals and insulators
117(1)
7.9 Holes
117(2)
7.10 Divalent metals
119(1)
7.11 Finite temperatures
120(1)
7.12 Concluding remarks
121(2)
Exercises
122(1)
8 Semiconductors
8.1 Introduction
123(1)
8.2 Intrinsic semiconductors
123(5)
8.3 Extrinsic semiconductors
128(4)
8.4 Scattering
132(2)
8.5 A relationship between electron and hole densities
134(2)
8.6 III-V and II-VI compounds
136(4)
8.7 Non-equilibrium processes
140(1)
8.8 Real semiconductors
141(2)
8.9 Amorphous semiconductors
143(1)
8.10 Measurement of semiconductor properties
143(8)
8.10.1 Mobility
143(3)
8.10.2 Hall coefficient
146(1)
8.10.3 Effective mass
146(1)
8.10.4 Energy gap
147(4)
8.10.5 Carrier lifetime
151(1)
8.11 Preparation of pure and controlled-impurity single-crystal semiconductors
151(10)
8.11.1 Crystal growth from the melt
151(1)
8.11.2 Zone refining
152(2)
8.11.3 Modern methods of silicon purification
154(1)
8.11.4 Epitaxial growth
154(2)
8.11.5 Molecular beam epitaxy
156(1)
8.11.6 Metal-organic chemical vapour deposition
156(1)
8.11.7 Hydride vapour phase epitaxy (HVPE) for nitride devices
157(1)
Exercises
158(3)
9 Principles of semiconductor devices
9.1 Introduction
161(1)
9.2 The p-n junction in equilibrium
161(5)
9.3 Rectification
166(2)
9.4 Injection
168(2)
9.5 Junction capacity
170(1)
9.6 The transistor
171(5)
9.7 Metal-semiconductor junctions
176(2)
9.8 The role of surface states; real metal-semiconductor junctions
178(2)
9.9 Metal-insulator-semiconductor junctions
180(3)
9.10 The tunnel diode
183(3)
9.11 The backward diode
186(1)
9.12 The Zener diode and the avalanche diode
186(2)
9.12.1 Zener breakdown
187(1)
9.12.2 Avalanche breakdown
187(1)
9.13 Varactor diodes
188(1)
9.14 Field-effect transistors
189(5)
9.15 Heterostructures
194(4)
9.16 Charge-coupled devices
198(2)
9.17 Silicon controlled rectifier
200(1)
9.18 The Gunn effect
201(3)
9.19 Strain gauges
204(1)
9.20 Measurement of magnetic field by the Hall effect
205(1)
9.21 Gas sensors
205(1)
9.22 Microelectronic circuits
206(4)
9.23 Plasma etching
210(2)
9.24 Recent techniques for overcoming limitations
212(1)
9.25 Building in the third dimension
213(2)
9.26 Microelectro-mechanical systems (MEMS)
215(3)
9.26.1 A movable mirror
215(1)
9.26.2 A mass spectrometer on a chip
216(2)
9.27 Nanoelectronics
218(4)
9.28 Social implications
222(3)
Exercises
223(2)
10 Dielectric materials
10.1 Introduction
225(1)
10.2 Macroscopic approach
225(1)
10.3 Microscopic approach
226(1)
10.4 Types of polarization
227(1)
10.5 The complex dielectric constant and the refractive index
228(1)
10.6 Frequency response
229(1)
10.7 Anomalous dispersion
230(1)
10.8 Polar and non-polar materials
231(2)
10.9 The Debye equation
233(1)
10.10 The effective field
234(2)
10.11 Acoustic waves
236(4)
10.12 Dielectric breakdown
240(1)
10.12.1 Intrinsic breakdown
240(1)
10.12.2 Thermal breakdown
240(1)
10.12.3 Discharge breakdown
241(1)
10.13 Piezoelectricity, pyroelectricity, and ferroelectricity
241(8)
10.13.1 Piezoelectricity
241(6)
10.13.2 Pyroelectricity
247(1)
10.13.3 Ferroelectrics
248(1)
10.14 Interaction of optical phonons with drifting electrons
249(1)
10.15 Optical fibres
250(2)
10.16 The Xerox process
252(1)
10.17 Liquid crystals
252(2)
10.18 Dielectrophoresis
254(5)
Exercises
256(3)
11 Magnetic materials
11.1 Introduction
259(1)
11.2 Macroscopic approach
260(1)
11.3 Microscopic theory (phenomenological)
260(4)
11.4 Domains and the hysteresis curve
264(4)
11.5 Soft magnetic materials
268(2)
11.6 Hard magnetic materials (permanent magnets)
270(3)
11.7 Microscopic theory (quantum-mechanical)
273(9)
11.7.1 The Stern-Gerlach experiment
278(1)
11.7.2 Paramagnetism
278(2)
11.7.3 Paramagnetic solids
280(1)
11.7.4 Antiferromagnetism
281(1)
11.7.5 Ferromagnetism
281(1)
11.7.6 Ferrimagnetism
282(1)
11.7.7 Garnets
282(1)
11.7.8 Helimagnetism
282(1)
11.8 Magnetic resonance
282(2)
11.8.1 Paramagnetic resonance
282(1)
11.8.2 Electron spin resonance
283(1)
11.8.3 Ferromagnetic, antiferromagnetic, and ferrimagnetic resonance
283(1)
11.8.4 Nuclear magnetic resonance
283(1)
11.8.5 Cyclotron resonance
284(1)
11.9 The quantum Hall effect
284(2)
11.10 Magnetoresistance
286(1)
11.11 Spintronics
287(4)
11.11.1 Spin current
287(2)
11.11.2 Spin tunnelling
289(1)
11.11.3 Spin waves and magnons
290(1)
11.11.4 Spin Hall effect and its inverse
290(1)
11.11.5 Spin and light
290(1)
11.11.6 Spin transfer torque
291(1)
11.12 Some applications
291(4)
11.12.1 Isolators
291(1)
11.12.2 Sensors
292(1)
11.12.3 Magnetic read-heads
292(1)
11.12.4 Electric motors
293(1)
Exercises
293(2)
12 Lasers
12.1 Equilibrium
295(1)
12.2 Two-state systems
295(4)
12.3 Lineshape function
299(2)
12.4 Absorption and amplification
301(1)
12.5 Resonators and conditions of oscillation
301(1)
12.6 Some practical laser systems
302(5)
12.6.1 Solid state lasers
303(1)
12.6.2 The gaseous discharge laser
304(1)
12.6.3 Dye lasers
305(1)
12.6.4 Gas-dynamic lasers
306(1)
12.6.5 Excimer lasers
307(1)
12.6.6 Chemical lasers
307(1)
12.7 Semiconductor lasers
307(12)
12.7.1 Fundamentals
307(5)
12.7.2 Wells, wires, and dots
312(4)
12.7.3 Bandgap engineering
316(2)
12.7.4 Quantum cascade lasers
318(1)
12.8 Laser modes and control techniques
319(3)
12.8.1 Transverse modes
319(1)
12.8.2 Axial modes
320(1)
12.8.3 Q switching
321(1)
12.8.4 Cavity dumping
321(1)
12.8.5 Mode locking
321(1)
12.9 Parametric oscillators
322(1)
12.10 Optical fibre amplifiers
323(1)
12.11 Masers
324(2)
12.12 Noise
326(1)
12.13 Applications
326(9)
12.13.1 Nonlinear optics
327(1)
12.13.2 Spectroscopy
327(1)
12.13.3 Photochemistry
327(1)
12.13.4 Study of rapid events
328(1)
12.13.5 Plasma diagnostics
328(1)
12.13.6 Plasma heating
328(1)
12.13.7 Acoustics
328(1)
12.13.8 Genetics
328(1)
12.13.9 Metrology
328(1)
12.13.10 Manipulation of atoms by light
328(1)
12.13.11 Optical radar
329(1)
12.13.12 Optical discs
329(1)
12.13.13 Medical applications
329(1)
12.13.14 Machining
330(1)
12.13.15 Sensors
330(1)
12.13.16 Communications
331(1)
12.13.17 Nuclear applications
331(1)
12.13.18 Holography
332(2)
12.13.19 Raman scattering
334(1)
12.14 The atom laser
335(3)
Exercises
336(2)
13 Optoelectronics
13.1 Introduction
338(1)
13.2 Light detectors
339(2)
13.3 Light emitting diodes (LEDs)
341(4)
13.4 Electro-optic, photorefractive, and nonlinear materials
345(1)
13.5 Volume holography and phase conjugation
346(5)
13.6 Acousto-optic interaction
351(2)
13.7 Integrated optics
353(4)
13.7.1 Waveguides
354(1)
13.7.2 Phase shifter
354(1)
13.7.3 Directional coupler
355(2)
13.7.4 Filters
357(1)
13.8 Spatial light modulators
357(2)
13.9 Nonlinear Fabry-Perot cavities
359(3)
13.10 Optical switching
362(2)
13.11 Electro-absorption in quantum well structures
364(7)
13.11.1 Excitons
364(1)
13.11.2 Excitons in quantum wells
365(1)
13.11.3 Electro-absorption
365(2)
13.11.4 Applications
367(2)
Exercises
369(2)
14 Superconductivity
14.1 Introduction
371(2)
14.2 The effect of a magnetic field
373(2)
14.2.1 The critical magnetic field
373(1)
14.2.2 The Meissner effect
374(1)
14.3 Microscopic theory
375(1)
14.4 Thermodynamical treatment
376(5)
14.5 Surface energy
381(1)
14.6 The Landau-Ginzburg theory
382(7)
14.7 The energy gap
389(4)
14.8 Some applications
393(3)
14.8.1 High-field magnets
393(1)
14.8.2 Switches and memory elements
394(1)
14.8.3 Magnetometers
394(1)
14.8.4 Metrology
395(1)
14.8.5 Suspension systems and motors
395(1)
14.8.6 Radiation detectors
395(1)
14.8.7 Heat valves
396(1)
14.9 High-rc superconductors
396(5)
14.10 New superconductors%
401(3)
Exercises
403(1)
15 Artificial materials or metamaterials
15.1 Introduction
404(1)
15.2 Natural and artificial materials
405(2)
15.3 Photonic bandgap materials
407(1)
15.4 Equivalent plasma frequency of a wire medium
408(2)
15.5 Resonant elements for metamaterials
410(1)
15.6 Polarizability of a current-carrying resonant loop
411(1)
15.7 Effective permeability
412(2)
15.8 Effect of negative material constants
414(3)
15.9 The `perfect' lens
417(5)
15.10 Detectors for magnetic resonance imaging
422(2)
Epilogue
424(50)
Appendix I Organic semiconductors
427(7)
Appendix II Nobel laureates
434(2)
Appendix III Physical constants
436(2)
Appendix IV Variational calculus. Derivation of Euler's equation
438(2)
Appendix V Thermoelectricity
440(4)
Appendix VI Principles of the operation of computer memories
444(19)
Appendix VII Medical imaging
463(8)
Appendix VIII Suggestions for further reading
471(3)
Answers to exercises 474(3)
Index 477
Laszlo Solymar was born in 1930 in Budapest. He is Emeritus Professor of Applied Electromagnetism at the University of Oxford and Visiting Professor and Senior Research Fellow at Imperial College, London. He graduated from the Technical University of Budapest in 1952 and received the equivalent of a PhD in 1956 from the Hungarian Academy of Sciences. In 1956 he settled in England where he worked first in industry and later at the University of Oxford. He did research on antennas, microwaves, superconductors, holographic gratings, photorefractive materials, and metamaterials. He has held visiting professorships at the Universities of Paris, Copenhagen, Osnabrück, Berlin, Madrid, Budapest, and since 2000 Imperial College, London. He published 8 books and over 250 papers. He has been a Fellow of the Royal Society since 1995. He received the Faraday Medal of the Institution of Electrical Engineers in 1992.

Donald Walsh is an Emeritus fellow of Oriel College, Oxford. He first worked for about seven years at the Mullard Radio Valve Co, developing photo cells and flash tubes, then for about the same period at the Services Electronics Research Labs (SERL) on travelling wave tubes, klystrons and TR switches. He came to the Department of Engineering Science, Oxford in 1956 as a research fellow to help the newly appointed Reader in Electrical Engineering start a research group in microwave electronics, and later became a lecturer and college fellow.

Richard R. A. Syms has been Head of the Optical and Semiconductor Devices Group in the EEE Department, Imperial College London, since 1992 and Professor of Microsystems Technology since 1996. He graduated in Engineering Science at Oxford University in 1979, and obtained a DPhil in 1982, also from Oxford. He carried out postgraduate work at University College London, Oxford University, and the Rutherford Appleton Laboratory before moving to Imperial. He has published around 180 journal papers, 100 conference papers and 2 books on holography, guided wave optics, electromagnetic theory, metamaterials, magnetic resonance imaging, and micro-electro-mechanical systems (MEMS), and has 18 granted patents. In 2001, he co-founded the Imperial College spin-out company Microsaic Systems. He is an Associate Editor for the Journal of Microelectromechanical Systems. He is a Fellow of the Royal Academy of Engineering, the Institute of Physics, and the Institute of Electrical Engineers.