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From Physics to Devices: Light Emissions in Silicon: Light Emissions in Silicon: From Physics to Devices, Volume 49 [Kietas viršelis]

Series edited by (Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany), Volume editor (National Research Council, Institute of Microstructure Sciences), Series edited by (WILLARDSON CONSULTING SPOKANE, WASHINGTON)
  • Formatas: Hardback, 351 pages, aukštis x plotis: 229x152 mm, weight: 680 g
  • Serija: Semiconductors and Semimetals
  • Išleidimo metai: 14-Nov-1997
  • Leidėjas: Academic Press Inc
  • ISBN-10: 0127521577
  • ISBN-13: 9780127521572
  • Formatas: Hardback, 351 pages, aukštis x plotis: 229x152 mm, weight: 680 g
  • Serija: Semiconductors and Semimetals
  • Išleidimo metai: 14-Nov-1997
  • Leidėjas: Academic Press Inc
  • ISBN-10: 0127521577
  • ISBN-13: 9780127521572
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
List of Contributors ix Abstract xi Preface xiii Light Emission in Silicon David J. Lockwood Introduction 1(1) The Optoelectronic Age 2(2) Physical Properties of Si 4(2) Methods for Overcoming the Indirect Bandgap Limitations in Si 6(20) Brillouin Zone Folding in Atomic Layer Superlattices 6(3) Band Structure Engineering via Alloying 9(2) Luminescence via Impurity Centers 11(3) Si Nanostructures 14(10) Polymers and Molecules Containing Si 24(1) Hybrid Methods for Integrating Direct Gap Materials with Si 25(1) Prospects for Si Based Optoelectronic Devices 26(11) References 29(8) Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures Gerhard Abstreiter Introduction 37(3) Structural Properties 40(4) Bandgaps, Band Offsets, and Brillouin Zone Folding 44(10) Photoluminescence, Electroluminescence, and Photocurrent Measurements 54(16) Si1-xGex Alloy Layers and Quantum Wells 54(5) SimGen Short Period Superlattices 59(5) GenSim Gen Atomic Layer Structures and Interfaces with Staggered Band Offsets 64(3) Laterally Confined QWs and Ge-Rich Self-assembled Dots 67(3) Concluding Remarks 70(8) Acknowledgments 70(1) References 71(7) Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices Thomas G. Brown Dennis G. Hall Introductory Concepts 78(5) Isoelectronic Impurity Atoms and Complexes 78(1) Exciton Binding 79(3) Historical Perspective: Isoelectronic Impurities in GaP 82(1) Isoelectronic Impurities in Si: A Resume 83(1) Isoelectronic Bound Exciton Emission from c-Si 83(11) Sample Preparation and Processing 83(2) Photoluminescence from Si: In, Si: Al, and Si: Be 85(6) Photoluminescence from Chalcogen-related Centers 91(2) Electroluminescence at Isoelectric Centers in c-Si 93(1) Isoelectronic Bound Exciton Emission in Be-Doped SiGe Alloys: A Case Study 94(9) Photoluminescence from Thick, Be-Doped SiGe Alloys 95(2) Photoluminescence from Be-Doped SiGe/Si QWs 97(2) Beryllium Doping During Epitaxial Growth 99(4) Device Considerations 103(3) Concluding Remarks 106(5) References 107(4) Erbium in Silicon J. Michel L. V. C. Assali M. T. Morse L. C. Kimerling Introduction 111(2) Er Doping of Si 113(8) Ion Implantation 113(4) Solid Phase Epitaxy (SPE) 117(1) Molecular Beam Epitaxy (MBE) 118(1) Chemical Vapor Deposition (CVD) 118(2) Ion-beam Epitaxy (IBE) 120(1) Diffusivity and Solubility 121(6) Light Emission 127(15) Physics of Light Emission 127(6) Ligands 133(3) Electrical Properties 136(3) Activation and Deactivation Processes 139(3) Electronic Structure 142(8) Electronic Structure of Er-related Impurities in Si 144(1) Isolated Er Impurity in Si 145(3) Er-related Complexes in Si 148(2) Light Emitting Diode Design 150(3) Summary 153(4) Acknowledgments 153(1) References 153(4) Silicon and Germanium Nanoparticles Yoshihiko Kanemitsu Introduction 157(1) Fabrication of Silicon (Si) and Germanium (Ge) Nanoparticles 158(12) Si Nanoclusters: Organic Synthesis 158(4) Isolated Si Nanocrystals: Decomposition of Silane Gas 162(1) Porous Si and Ge: Electrochemical Etching 163(3) Si and Ge Nanocrystals in SiO2 Matrices: Co-sputtering and Ion Implantation 166(2) Ge Nanocrystals: Chemical Methods 168(2) Photoluminescence Mechanism 170(19) Size Dependence of the PL Peak Energy 171(3) Resonantly Excited Luminescence Spectrum 174(3) Three Region Model 177(8) Photoluminescence Dynamics 185(4) Unique Optical Phenomena 189(11) Nonlinear Optical Properties of π-Si 189(5) Tuning of Luminescence Wavelength 194(6) Summary 200(6) Acknowledgments 201(1) References 202(4) Porous Silicon: Photoluminescence and Electroluminescent Devices Philippe M. Fauchet Introduction 206(4) Si Light Emission 206(1) Porous Si 207(3) Properties of the PL Bands 210(8) The ``Red Band 210(2) The ``Blue Band 212(1) The ``Infrared Bands 213(3) The Extrinsic Luminescence Bands 216(2) Origin of the Intrinsic PL Bands 218(8) Quantum Confinement and the Red PL Band 218(4) Si Oxide and the Blue PL Band 222(2) Recrystallization, Dangling Bonds, and the Infrared PL Bands 224(2) Pure Quantum Confinement and Surface States: A Critical Discussion 226(7) Nonoptical Properties 233(5) Introduction 233(1) Electrical Properties 233(3) Structural Properties 236(2) Electroluminescent Devices 238(8) General Survey 238(1) LED Lifetime 239(1) Power Efficiency 240(1) Response Time 241(2) Spectral Coverage 243(1) Compatibility with Microelectronics 244(2) Conclusions and Outlook 246(7) Acknowledgments 247(1) References 247(6) Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites C. Delerue G. Allan M. Lannoo Introduction 253(1) Electronic Properties 254(4) Optical Transitions and Radiative Lifetime 258(4) Exchange Splitting and Symmetry of the Crystallites 262(7) Atomic Relaxation, Stokes Shift, and Self-trapped Exciton 269(10) Stokes Shift for the Delocalized States 270(1) The Existence of Self-trapped Excitons 271(8) Nonradiative Recombination 279(13) Recombination on Surface Dangling Bonds 279(7) Nonradiative Auger Recombination 286(6) Screening in Nanocrystallites and Coulomb Charging Effects 292(6) Hydrogenic Impurities 292(3) Coulomb Effects and Effective Dielectric Constant 295(3) Conclusion 298(5) References 299(4) Silicon Polymers and Nanocrystals Louis Brus Introduction 303(1) Silicon Polymers in One, Two, and Three Dimensions 304(4) Band Structure 304(3) Luminescence 307(1) Passivated Silicon Nanocrystals 308(14) Theory of Optical Properties 308(1) Nanocrystal Synthesis, Characterization, and Luminescence 309(10) Comparison Between Nanocrystals and Macroscopic Crysalline Si 319(2) Physical Size Regimes for Individual Nanocrystals 321(1) Electron Transport in Porous Nanocrystal Materials 322(7) Acknowledgments 325(1) References 326(3) Index 329(8) Contents of Volumes in This Series 337
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany