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Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications 2012 [Kietas viršelis]

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  • Formatas: Hardback, 598 pages, aukštis x plotis: 235x155 mm, weight: 1094 g, XXIII, 598 p., 1 Hardback
  • Serija: NanoScience and Technology
  • Išleidimo metai: 14-Mar-2012
  • Leidėjas: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642204678
  • ISBN-13: 9783642204678
Kitos knygos pagal šią temą:
Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications 2012Didesnis paveikslėlis
  • Formatas: Hardback, 598 pages, aukštis x plotis: 235x155 mm, weight: 1094 g, XXIII, 598 p., 1 Hardback
  • Serija: NanoScience and Technology
  • Išleidimo metai: 14-Mar-2012
  • Leidėjas: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • ISBN-10: 3642204678
  • ISBN-13: 9783642204678
Kitos knygos pagal šią temą:
Pastovi nuoroda: https://www.kriso.lt/db/9783642204678.html
Raktažodžiai:

Graphene Nanoelectronics provides an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It is written in tutorial, review-like manner, yielding a book useful to experts as well as those new to the field.



Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.
1 Introduction
1(14)
Hassan Raza
1.1 Overview
1(6)
1.2 Book Summary
7(3)
1.3 Outlook
10(5)
References
11(4)
Part I Metrology and Synthesis
2 Raman Spectroscopy: Characterization of Edges, Defects, and the Fermi Energy of Graphene and sp2 Carbons
15(42)
M.S. Dresselhaus
A. Jorio
L.G. Cancado
G. Dresselhaus
R. Saito
2.1 Introduction to the Resonance Raman Spectra of Graphene
15(7)
2.1.1 The Raman Spectra of sp2 Carbons
16(2)
2.1.2 Edge Structure of Graphene
18(1)
2.1.3 The Multiple-Resonance Raman Scattering Process
18(3)
2.1.4 Concept of the Kohn Anomaly
21(1)
2.1.5 Introduction to Near-Field Raman Spectroscopy
22(1)
2.2 Characterization of Defects
22(7)
2.2.1 Point Defects Induced by Ion Bombardment
23(1)
2.2.2 Model for the D-Band Activated Region
24(2)
2.2.3 Line Defects at the Edges of Nanographene
26(3)
2.3 Characterization of Edges
29(11)
2.3.1 Overview of Graphene Edges
29(1)
2.3.2 The Characterization of Graphene Edges from Their D-Band Scattering
30(4)
2.3.3 Mode assignments of the Raman Spectra of Graphene Nanoribbons
34(4)
2.3.4 Polarization Dependence of the Raman Intensity
38(2)
2.4 The Fermi Energy Dependence: The Kohn Anomaly
40(4)
2.4.1 Effect of Gate Doping on the G-Band of Single-Layer Graphene
40(2)
2.4.2 Effect of Gate Doping on the G Band of Double-Layer Graphene
42(2)
2.5 Near-Field Raman Spectroscopy
44(5)
2.5.1 The Spatial Resolution in Optical Microscopes
45(1)
2.5.2 The Principle of TERS
45(1)
2.5.3 Mechanism of Near-Field Enhancement
46(1)
2.5.4 Application to Carbon Nanotubes
47(2)
2.6 Summary and Perspective
49(8)
References
53(4)
3 Scanning Tunneling Microscopy and Spectroscopy of Graphene
57(36)
Guohong Li
Eva Y. Andrei
3.1 Introduction
57(1)
3.2 STM/STS Techniques
58(3)
3.3 Sample Preparation
61(1)
3.4 Hallmarks of Graphene in STM/STS
61(5)
3.5 Line Shape of Landau Levels
66(1)
3.6 Electron-phonon Coupling
67(2)
3.7 Coupling Between Graphene Layers
69(2)
3.8 Twist Between Graphene Layers
71(6)
3.8.1 Appearance of Moire Pattern
72(1)
3.8.2 Saddle Point Van Hove Singularities
73(1)
3.8.3 Single Layer-like Behavior and Velocity Renormalization
73(4)
3.9 Graphene on SiO2
77(4)
3.9.1 Three Types of Corrugations
77(2)
3.9.2 Scanning Tunneling Spectroscopy
79(1)
3.9.3 Quantum Interference and Fermi Velocity
79(1)
3.9.4 Trapped Charges in SiO2
80(1)
3.10 Edges, Defects and Magnetism
81(1)
3.11 SPM-based Nano-lithography
82(5)
3.11.1 Signs of Invasiveness of an STM Tip
83(1)
3.11.2 Folding Graphene Layers
83(1)
3.11.3 Cutting Graphene Layers
84(1)
3.11.4 Surface Modification
85(2)
3.12 Summary and Perspectives
87(6)
References
88(5)
4 The Electronic Properties of Adsorbates on Graphene
93(42)
Eli Rotenberg
4.1 Introduction: What Are Adsorbates on Graphene Good for?
93(3)
4.2 Angle-Resolved Photoemission Spectroscopy
96(6)
4.2.1 Introduction
96(1)
4.2.2 Band Structure Determination of Graphene
96(3)
4.2.3 Self-energy Determination
99(3)
4.3 The "Zoology" of Adsorbates
102(8)
4.3.1 Adsorption of Nontransition-Metal Atoms
103(4)
4.3.2 Adsorption of Transition Metal Atoms
107(3)
4.4 Adsorbate-Graphene Interactions: General Symmetry Considerations
110(2)
4.5 Hydrogen on Graphene As a Prototype Adsorbate System
112(6)
4.5.1 Introduction
112(2)
4.5.2 Hydrogen on Graphene: Experimental Evidence for Anderson Localization
114(4)
4.6 Potassium on Graphene: The Coulomb Interaction in Graphene, Revealed
118(6)
4.6.1 K Adsorption on Epitaxial Graphene on SiC(0001)
118(2)
4.6.2 K Adsorption on Quasi-free-Standing Epitaxial Graphene on SiC(0001)
120(4)
4.7 Calcium Adsorption: Superconducting Instability of Graphene
124(4)
4.8 Conclusions and Outlook
128(7)
References
129(6)
5 Epitaxial Graphene on SiC(0001)
135(26)
Thomas Seyller
5.1 Introduction
135(2)
5.2 Silicon Carbide and Its Polar Surfaces
137(1)
5.3 Growth of Epitaxial Graphene on SiC(0001) in Ultra-High Vacuum
138(2)
5.4 The (6√3 x 6√3)R30° Reconstruction
140(3)
5.5 Electronic Structure of Monolayer and Bilayer Graphene at the K-point
143(3)
5.6 State-of-the Art Graphene Growth in Argon Atmosphere
146(3)
5.7 Transport Properties of Graphene on SiC(0001)
149(3)
5.8 Engineering the Interface Between Graphene and SiC(0001) by Hydrogen Intercalation
152(3)
5.9 Conclusion
155(6)
References
155(6)
6 Magneto-Transport on Epitaxial Graphene
161(28)
Peide D. Ye
Michael Capano
Tian Shen
Yanqing Wu
Michael L. Bolen
6.1 Introduction
161(2)
6.2 Epitaxial Graphene Synthesis
163(5)
6.3 Dielectric Integration on Epitaxial Graphene
168(1)
6.4 Top-Gate Graphene Field-Effect Transistors
169(3)
6.5 Half-Integer Quantum Hall-Effect in Epitaxial Graphene
172(6)
6.6 Ballistic and Coherent Transport on Epitaxial Graphene
178(5)
6.7 Spin Transport on Epitaxial Graphene
183(2)
6.8 Summary
185(4)
References
185(4)
7 Epitaxial Graphene on Metals
189(48)
Yuriy Dedkov
Karsten Horn
Alexei Preobrajenski
Mikhail Fonin
7.1 Introduction
189(4)
7.2 Methods of Graphene Preparation on Metal Surfaces
193(1)
7.3 Experimental Methods
194(3)
7.4 Graphene on Lattice-Matched 3d-Metal Surfaces
197(12)
7.4.1 Atomic Structure of Graphene Layer on Ni(111) and Co(0001)
198(2)
7.4.2 Electronic Structure of Graphene on Lattice-Matched Surfaces
200(6)
7.4.3 Magnetism of Graphene on the Ni(111) Surface
206(3)
7.5 Graphene on Lattice-Mismatched 4d, 5d-Metal Surfaces
209(9)
7.5.1 Structure of Graphene on Ir(111), Ru(0001), and Rh(111)
210(4)
7.5.2 Electronic Structure of Graphene on Lattice-Mismatched Surfaces
214(4)
7.6 Hybrid Structures on the Basis of Graphene Layers on Metal Surfaces
218(10)
7.6.1 Intercalation-like Systems
219(3)
7.6.2 Growth of Noble Metal Clusters on Graphene Moire
222(3)
7.6.3 Growth of Magnetic Metal Clusters on Graphene Moire
225(1)
7.6.4 Chemical Functionalization of Graphene on Transition Metal Surfaces
226(2)
7.7 Conclusions and Outlook
228(9)
References
230(7)
Part II Electronic-structure and Transport Properties
8 Electronic Properties of Monolayer and Bilayer Graphene
237(40)
Edward McCann
8.1 Introduction
237(1)
8.2 The Crystal Structure of Monolayer Graphene
238(2)
8.2.1 The Real Space Structure
238(1)
8.2.2 The Reciprocal Lattice of Graphene
239(1)
8.2.3 The Atomic Orbitals of Graphene
239(1)
8.3 The Tight-Binding Model
240(2)
8.4 The Tight-Binding Model of Monolayer Graphene
242(6)
8.4.1 Diagonal Matrix Elements
242(2)
8.4.2 Off-Diagonal Matrix Elements
244(2)
8.4.3 The Low-Energy Electronic Bands of Monolayer Graphene
246(2)
8.5 Massless Chiral Quasiparticles in Monolayer Graphene
248(3)
8.5.1 The Dirac-Like Hamiltonian
248(1)
8.5.2 Pseudospin and Chirality in Graphene
249(2)
8.6 The Tight-Binding Model of Bilayer Graphene
251(3)
8.7 Massive Chiral Quasiparticles in Bilayer Graphene
254(4)
8.7.1 The Low-Energy Bands of Bilayer Graphene
254(1)
8.7.2 The Two-Component Hamiltonian of Bilayer Graphene
255(1)
8.7.3 Pseudospin and Chirality in Bilayer Graphene
256(2)
8.8 The Integer Quantum Hall Effect in Graphene
258(5)
8.8.1 The Landau Level Spectrum of Monolayer Graphene
258(2)
8.8.2 The Integer Quantum Hall Effect in Monolayer Graphene
260(1)
8.8.3 The Landau Level Spectrum of Bilayer Graphene
261(1)
8.8.4 The Integer Quantum Hall Effect in Bilayer Graphene
262(1)
8.9 Trigonal Warping in Graphene
263(3)
8.9.1 Trigonal Warping in Monolayer Graphene
263(1)
8.9.2 Trigonal Warping and Lifshitz Transition in Bilayer Graphene
264(2)
8.10 Tuneable Band Gap in Bilayer Graphene
266(6)
8.10.1 Asymmetry Gap in the Band Structure of Bilayer Graphene
266(2)
8.10.2 Self-Consistent Model of Screening in Bilayer Graphene
268(4)
8.11 Summary
272(5)
References
273(4)
9 Electronic Properties of Graphene Nanoribbons
277(24)
Katsunori Wakabayashi
9.1 Introduction
277(2)
9.2 Electronic States of Graphene
279(8)
9.2.1 Tight-Binding Model and Edge States
281(3)
9.2.2 Massless Dirac Equation
284(2)
9.2.3 Edge Boundary Condition and Intervalley Scattering
286(1)
9.3 Electronic Transport Properties
287(6)
9.3.1 One-Way Excess Channel System
288(3)
9.3.2 Model of Impurity Potential
291(1)
9.3.3 Perfectly Conducting Channel: Absence of Anderson Localization
291(2)
9.4 Universality Class
293(3)
9.4.1 Graphene Nanoribbons with Generic Edge Structures
294(2)
9.5 Transport Properties Through Graphene Nanojunction
296(1)
9.6 Summary
297(4)
References
298(3)
10 Mesoscopics in Graphene: Dirac Points in Periodic Geometries
301(24)
H.A. Fertig
L. Brey
10.1 Graphene Ribbons
303(7)
10.1.1 Hamiltonian
303(1)
10.1.2 Zigzag Nanoribbons
304(3)
10.1.3 Armchair Nanoribbons
307(3)
10.2 Graphene Quantum Rings
310(7)
10.2.1 Chirality in Armchair Nanoribbons
311(1)
10.2.2 Phase Jumps at Corner Junctions
312(2)
10.2.3 Numerical Results
314(3)
10.3 Graphene in a Periodic Potential
317(5)
10.3.1 Counting Dirac Points
317(3)
10.3.2 Numerical Solutions of the Dirac Equation
320(1)
10.3.3 Conductivity
320(2)
10.4 Conclusion
322(3)
References
322(3)
11 Electronic Properties of Multilayer Graphene
325(32)
Hongki Min
11.1 Introduction
325(2)
11.1.1 Stacking Arrangements
326(1)
11.1.2 π-Orbital Continuum Model
327(1)
11.2 Energy Band Structure
327(9)
11.2.1 Preliminaries
327(1)
11.2.2 Monolayer Graphene
328(1)
11.2.3 AA Stacking
329(2)
11.2.4 AB Stacking
331(2)
11.2.5 ABC Stacking
333(1)
11.2.6 Arbitrary Stacking
334(2)
11.3 Landau-Level Spectrum
336(5)
11.3.1 Preliminaries
336(1)
11.3.2 AA Stacking
336(1)
11.3.3 AB Stacking
337(2)
11.3.4 ABC Stacking
339(1)
11.3.5 Arbitrary Stacking
339(2)
11.4 Low-Energy Effective Theory
341(7)
11.4.1 Introduction
341(1)
11.4.2 Pseudospin Hamiltonian
341(1)
11.4.3 Stacking Diagrams
342(1)
11.4.4 Partitioning Rules
342(2)
11.4.5 Degenerate State Perturbation Theory
344(3)
11.4.6 Limitations of the Minimal Model
347(1)
11.4.7 Effects of the Consecutive Stacking
347(1)
11.5 Applications
348(6)
11.5.1 Quantum Hall Conductivity
348(2)
11.5.2 Optical Conductivity
350(1)
11.5.3 Electrical Conductivity
351(3)
11.6 Conclusions
354(3)
References
355(2)
12 Graphene Carrier Transport Theory
357(38)
Shaffique Adam
12.1 Introduction
357(3)
12.2 Graphene Boltzmann Transport
360(9)
12.2.1 Screening: Random Phase Approximation (RPA)
362(3)
12.2.2 Coulomb Scatterers
365(1)
12.2.3 Gaussian White Noise Disorder
366(1)
12.2.4 Yukawa Potential
367(1)
12.2.5 Gaussian Correlated Impurities
367(1)
12.2.6 Midgap States
368(1)
12.3 Transport at Low Carrier Density
369(18)
12.3.1 Self-Consistent Approximation
371(6)
12.3.2 Effective Medium Theory
377(4)
12.3.3 Magneto-Transport and Temperature Dependence of the Minimum Conductivity
381(2)
12.3.4 Quantum to Classical Crossover
383(3)
12.3.5 Summary of Theoretical Predictions for Coulomb Impurities
386(1)
12.4 Comparison with Experiments
387(4)
12.4.1 Magnetotransport: Dependence of σxx and σxy on Carrier Density
387(2)
12.4.2 Dependence of σmin and Mobility on Impurity Concentration
389(1)
12.4.3 Dependence of σmin and Mobility on Dielectric Environment
389(2)
12.5 Conclusion
391(4)
References
392(3)
13 Exploring Quantum Transport in Graphene Ribbons with Lattice Defects and Adsorbates
395(40)
George Kirczenow
Siarhei Ihnatsenka
13.1 Landauer Theory of Transport
397(2)
13.2 Subband Structure and Transport in Ideal Ribbons
399(3)
13.3 Quantized Ballistic Conductance
402(1)
13.4 Electron Transport in Graphene Ribbons
403(1)
13.5 Discovery of Quantized Conductance in Strongly Disordered Graphene Ribbons
404(1)
13.6 The Roles of Different Classes of Defects
405(1)
13.7 Tight Binding Model of Ribbons with Edge Disorder, Interior Vacancies, and Long-Ranged Potentials
406(1)
13.8 Numerical Simulations of Quantum Transport
406(10)
13.8.1 Disorder-Induced Conductance Suppression, Fluctuations and Destruction of the Ballistic Quantized Conductance Plateaus
408(2)
13.8.2 Conductance Dips at the Edges of Ribbon Subbands
410(1)
13.8.3 The Role of Temperature
411(1)
13.8.4 From Ballistic Transport to Anderson Localization
412(2)
13.8.5 The Quantized Conductance in Disordered Ribbons: Theory vs. Experiment
414(2)
13.9 Adsorbates on Graphene and Dirac Point Resonances
416(7)
13.9.1 Tight Binding Hamiltonian for Adsorbates on Graphene
417(2)
13.9.2 Effective Hamiltonian for Adsorbates on Graphene
419(1)
13.9.3 The T-matrix Formalism
420(1)
13.9.4 Dirac Point Scattering Resonances due to H, F, and O Atoms and OH Molecules Adsorbed on Graphene
421(2)
13.10 Electron Quantum Transport in Graphene Ribbons with Adsorbates
423(8)
13.10.1 Building Efficient Tight-Binding Models
423(3)
13.10.2 Results of Numerical Simulations of Quantum Transport in Ribbons with Adsorbates
426(5)
13.11 Summary
431(4)
References
431(4)
14 Graphene Oxide: Synthesis, Characterization, Electronic Structure, and Applications
435(32)
Derek A. Stewart
K. Andre Mkhoyan
14.1 Introduction
436(1)
14.2 Understanding Bulk Graphite Oxide and Graphene Oxide Monolayers
437(2)
14.3 Fabrication of Graphite Oxide and Graphene Oxide
439(5)
14.3.1 Traditional Approaches to Fabricate Graphite Oxide
440(1)
14.3.2 New Fabrication Techniques for Graphite Oxide and Graphene Oxide
441(3)
14.4 Characterization Approaches
444(8)
14.4.1 Optical Microscopy
444(1)
14.4.2 Scanning Transmission Electron Microscopy
445(2)
14.4.3 Electron Energy Loss Spectroscopy
447(1)
14.4.4 Atomic Force Microscopy
448(1)
14.4.5 X-ray Photoelectron Spectroscopy
449(2)
14.4.6 Raman Spectroscopy of Graphene Oxide and Reduced Graphene
451(1)
14.5 Insight from Simulations
452(5)
14.5.1 Using Epoxy Groups to Unzip Graphene
452(2)
14.5.2 Graphene Oxide Electronic Structure
454(1)
14.5.3 Electron Mobility and Transport
455(2)
14.6 Applications for Graphene Oxide
457(2)
14.6.1 Graphene Oxide Electronics
457(1)
14.6.2 Sensors
458(1)
14.6.3 Carbon-Based Magnetism
458(1)
14.7 Future Perspectives
459(8)
References
460(7)
Part III From Physics and Chemistry of Graphene to Device Applications
15 Graphene pn Junction: Electronic Transport and Devices
467(42)
Tony Low
15.1 Introduction
467(2)
15.2 Transport in the Absence of a Magnetic Field
469(13)
15.2.1 Dirac Equation, Pseudospin, and Chirality
470(2)
15.2.2 Abrupt pn Junction and Analogy with Optics
472(2)
15.2.3 Tunneling for Dirac and Schrodinger Fermions
474(3)
15.2.4 Quantum Transport Modeling
477(2)
15.2.5 Experiments: Asymmetry and odd Resistances
479(3)
15.3 Transport in the Presence of Magnetic Fields
482(12)
15.3.1 Weak Magnetic Field Regime
482(3)
15.3.2 Edge States, Snake States, and Valley Isospin
485(2)
15.3.3 Quantum Hall Regime: The Ballistic Case
487(3)
15.3.4 Experiments: Ballistic to Ohmic Transition
490(4)
15.4 Transport in the Presence of Strain-Induced Pseudo-Magnetic Fields
494(9)
15.4.1 Strain-Induced Pseudo-Magnetic Field
494(3)
15.4.2 Edge States and Transport Gap
497(4)
15.4.3 Magnetic and Electric Snake States
501(2)
15.5 Discussions
503(6)
15.5.1 Devices: Current Status and Outlook
503(2)
15.5.2 Conclusions
505(1)
References
505(4)
16 Electronic Structure of Bilayer Graphene Nanoribbon and Its Device Application: A Computational Study
509(20)
Kai-Tak Lam
Gengchiau Liang
16.1 Introduction
509(2)
16.2 Methodology
511(1)
16.3 Electronic Structure of Monolayer Graphene Nanoribbon
512(4)
16.3.1 Armchair Edges
512(1)
16.3.2 Zigzag Edges
513(1)
16.3.3 Dopant Effect
514(2)
16.4 Electronic Structure of Bilayer Graphene Nanoribbon
516(3)
16.4.1 Armchair Edges
517(1)
16.4.2 Zigzag Edges with Dopants
518(1)
16.4.3 Interlayer Distance
518(1)
16.5 Bilayer Graphene Nanoribbon Device
519(2)
16.6 Bilayer ZGNR NEM Switch
521(3)
16.7 Conclusion
524(5)
References
525(4)
17 Field-Modulation Devices in Graphene Nanostructures
529(26)
Hassan Raza
17.1 Introduction
529(1)
17.2 Electronic Structure
530(3)
17.3 Theoretical Framework: Extended Huckel Theory
533(2)
17.4 Bilayer Graphene
535(3)
17.4.1 A-B stacking
536(1)
17.4.2 Strain Engineering
536(2)
17.4.3 Misalignment
538(1)
17.5 Armchair Graphene Nanoribbons
538(8)
17.5.1 Pristine Edges
539(4)
17.5.2 Periodic edge roughness effects
543(3)
17.6 Zigzag Graphene Nanoribbons with Periodic Edge Roughness
546(4)
17.7 Novel Applications
550(1)
17.8 Conclusions
551(4)
References
552(3)
18 Graphene Nanoribbons: From Chemistry to Circuits
555(32)
F. Tseng
D. Unluer
M.R. Stan
A.W. Ghosh
18.1 The Innermost Circle: The Atomistic View
556(7)
18.1.1 Flatland: A Romance in Two Dimensions
557(1)
18.1.2 Whither Metallicity?
558(1)
18.1.3 Edge Chemistry: Benzene or Graphene?
559(2)
18.1.4 Whither Chirality?
561(2)
18.2 The Next Circle: Two Terminal Mobilities and I-Vs
563(6)
18.2.1 Current-Voltage Characteristics (I-Vs)
563(3)
18.2.2 Low Bias Mobility-Bandgap Tradeoffs: Asymptotic Band Constraints
566(3)
18.3 The Third Level: Active Three-Terminal Electronics
569(7)
18.3.1 Wide-Narrow-Wide: All Graphene Devices
569(1)
18.3.2 Solving Quantum Transport and Electrostatic Equations
570(1)
18.3.3 Improved Electrostatics in 2-D
571(3)
18.3.4 Three-Terminal I-Vs
574(1)
18.3.5 Pinning vs. Quasi-Ohmic Contacts
575(1)
18.4 The Penultimate Circle: GNR Circuits
576(7)
18.4.1 Geometry of An All Graphene Circuit
577(2)
18.4.2 Compact Model Equations
579(1)
18.4.3 Digital Circuits
579(1)
18.4.4 How `Good' is a Graphene-based Invertor?
580(3)
18.4.5 Physical Domain Issues: Monolithic Device-Interconnect Structures
583(1)
18.5 Conclusions
583(4)
References
585(2)
Index 587