Preface |
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ix | |
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xi | |
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Parallel Transport in Low-Dimensional Semiconductor Structures |
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1 | (3) |
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4 | (17) |
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Pressure Effects on 2D Electronic Properties of Semiconductor Structures |
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4 | (14) |
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Tuning of the Lande g-Factor by Hydrostatic Pressure |
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18 | (3) |
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Integer Quantum Hall Effect |
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21 | (4) |
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21 | (1) |
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Spin Texture Excitations (Skyrmions) |
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22 | (3) |
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Zero Hall Resistance in the Semimetallic GaSb/InAs System |
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25 | (1) |
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Fractional Quantum Hall Effect |
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25 | (5) |
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25 | (1) |
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26 | (4) |
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Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28 Ga0.72 As, Ga0.47 In0.53 As/Al0.48 In0.52, and in Ga0.47 In0.53 As/InP Heterojunctions |
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30 | (15) |
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Pressure Dependence of the Effective Mass |
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31 | (6) |
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Amplitude of the Oscillations and γ Damping Factor |
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37 | (2) |
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39 | (1) |
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40 | (5) |
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Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures |
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45 | (2) |
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47 | (17) |
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47 | (1) |
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48 | (3) |
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Calculating the I-V Characteristic |
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51 | (3) |
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54 | (3) |
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57 | (6) |
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Strain Due to Pseudomorphic Growth |
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63 | (1) |
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64 | (2) |
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High Pressure Studies of Negative Differential Resistance |
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66 | (44) |
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66 | (2) |
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Resonant Tunneling in Single-, Double-, and Multiple-Barrier Heterostructures |
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68 | (33) |
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Resonant Interband Tunneling |
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101 | (9) |
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110 | (8) |
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111 | (1) |
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112 | (6) |
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Phonons, Strains, and Pressure in Semiconductors |
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118 | (9) |
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Historical Review of Strain Effects |
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118 | (3) |
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Effects of Stress and Strain on Electrons and Phonons in Crystals |
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121 | (6) |
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127 | (17) |
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Phonons and Crystal Symmetry |
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127 | (5) |
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Strains, Stresses, and Crystal Symmetry |
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132 | (6) |
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Experimental Techniques for Applying Stresses |
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138 | (6) |
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Effects of Hydrostatic Pressure on Optical Phonons |
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144 | (19) |
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Mode Gruneisen Parameters |
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148 | (4) |
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Thermal Expansion: Quantum Effects at T = 0 |
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152 | (3) |
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Phonon Linewidths and Lifetimes |
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155 | (1) |
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156 | (7) |
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Effects of Strains on Optical Phonons |
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163 | (36) |
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Phonon Deformation Potentials |
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164 | (3) |
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167 | (4) |
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171 | (20) |
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Theoretical Models and Trends of Phonon Deformation Potentials |
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191 | (3) |
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Other Uses of Phonon Deformation Potentials |
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194 | (5) |
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Strain Characterization of Heterojunctions and Superlattices |
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199 | (21) |
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Elastic and Piezoelectric Considerations in Heterojunctions and Superlattices |
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199 | (6) |
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Pressure and Temperature Dependence of Strains |
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205 | (8) |
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Characterization of Strains through Raman Spectroscopy |
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213 | (7) |
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220 | (16) |
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222 | (1) |
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222 | (2) |
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224 | (12) |
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Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures |
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236 | (2) |
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Effects of Homogeneous Deformation on Electronic Energy Levels |
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238 | (26) |
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238 | (16) |
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254 | (10) |
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Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors |
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264 | (2) |
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Piezo-Optical Response of Ge and GaAs in the Opaque Region |
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266 | (4) |
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Intrinsic Piezobirefringence in the Transparent Region |
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270 | (1) |
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Effects of External Stress on Quantum States |
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271 | (24) |
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Effects of X Parallel to [ 001] and [ 011] (Piezoelectric Effect) on an In0.21 Ga0.79 As/GaAs (100) Single-Quantum-Well Structure |
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272 | (5) |
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Effects of X Parallel to [ 001] and [ 011] (Piezoelectric Effect) on a GaAs/GaAlAs (100) Single-Quantum-Well Structure |
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277 | (1) |
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Determination of the Symmetry of Excitons Associated with Miniband Dispersion in InGaAs/GaAs (100) Superlattices |
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278 | (1) |
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Asymmetrical GaAs/GaAlAs (100) Double Quantum Wells |
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278 | (5) |
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Effects of X Parallel to [ 001] on Bulk GaAs and GaAs/GaAlAs Single Quantum Wells Grown on (100) Si Substrates |
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283 | (5) |
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Symmetry of Conduction States of GaAs/AlAs Type II (001) Superlattices |
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288 | (2) |
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Determination of the Band Alignment in Si1-x Gex/Si (100) Quantum Wells |
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290 | (5) |
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295 | (1) |
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296 | (5) |
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296 | (5) |
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Semiconductor Optoelectronic Devices |
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301 | (1) |
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Experimental Considerations |
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302 | (3) |
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305 | (21) |
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305 | (3) |
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Laser Characteristics: Their Pressure and Temperature Dependence |
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308 | (18) |
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Uniaxial Strain Effects: Strained-Layer Lasers |
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326 | (1) |
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Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization |
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327 | (21) |
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327 | (2) |
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Physics of Impact Ionization in Semiconductors |
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329 | (3) |
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332 | (12) |
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``Universal'' Dependence of Avalanche Breakdown on Band Structure |
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344 | (3) |
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347 | (1) |
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348 | (6) |
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349 | (1) |
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349 | (5) |
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The Application of High Nitrogen Pressure in the Physics and Technology of III--N Compounds |
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354 | (1) |
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Thermal Stability of AIN, GaN, and InN |
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355 | (2) |
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Solubility of N in Liquid Al, Ga, and In |
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357 | (2) |
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Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and In |
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359 | (3) |
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High N2 Pressure Solution Growth of GaN |
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362 | (3) |
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362 | (1) |
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363 | (2) |
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Physical Properties of Pressure-Grown GaN Crystals |
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365 | (5) |
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Wet Etching and Surface Preparation |
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370 | (4) |
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374 | (3) |
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377 | (5) |
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378 | (1) |
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378 | (4) |
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Diamond Anvil Cells in High Pressure Studies of Semiconductors |
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DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure |
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382 | (32) |
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Diamond as an Anvil Material |
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382 | (14) |
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Precision Fabrication of a Typical DAC |
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396 | (4) |
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Principle of the Alignment of Diamond Anvils |
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400 | (4) |
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Gasketing: A Turning Point in DAC Use |
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404 | (1) |
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Preparation of the Sample in a Typical DAC Experiment |
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405 | (1) |
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Pressure Scale and Pressure Calibration |
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406 | (3) |
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Pressure-Transmitting Medium and the Limit of Hydrostaticity |
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409 | (2) |
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Pressure Combined with Other Thermodynamic Fields |
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411 | (3) |
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Condensed Matter Physics Techniques Coupled to a DAC |
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414 | (10) |
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415 | (5) |
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420 | (4) |
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424 | (1) |
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High Pressure Studies of Semiconductors |
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424 | (5) |
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Conventional Semiconductors |
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425 | (2) |
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Strongly Correlated Semiconductor Systems |
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427 | (2) |
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429 | (8) |
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430 | (1) |
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431 | (6) |
Index |
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437 | (8) |
Contents of Volumes in This Series |
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445 | |