Atnaujinkite slapukų nuostatas

El. knyga: High-Speed Devices and Circuits with THz Applications

Edited by (Fraunhofer Institute, Berlin, Germany)
Kitos knygos pagal šią temą:
High-Speed Devices and Circuits with THz ApplicationsDidesnis paveikslėlis
Kitos knygos pagal šią temą:

DRM apribojimai

  • Kopijuoti:

    neleidžiama

  • Spausdinti:

    neleidžiama

  • El. knygos naudojimas:

    Skaitmeninių teisių valdymas (DRM)
    Leidykla pateikė šią knygą šifruota forma, o tai reiškia, kad norint ją atrakinti ir perskaityti reikia įdiegti nemokamą programinę įrangą. Norint skaityti šią el. knygą, turite susikurti Adobe ID . Daugiau informacijos  čia. El. knygą galima atsisiųsti į 6 įrenginius (vienas vartotojas su tuo pačiu Adobe ID).

    Reikalinga programinė įranga
    Norint skaityti šią el. knygą mobiliajame įrenginyje (telefone ar planšetiniame kompiuteryje), turite įdiegti šią nemokamą programėlę: PocketBook Reader (iOS / Android)

    Norint skaityti šią el. knygą asmeniniame arba „Mac“ kompiuteryje, Jums reikalinga  Adobe Digital Editions “ (tai nemokama programa, specialiai sukurta el. knygoms. Tai nėra tas pats, kas „Adobe Reader“, kurią tikriausiai jau turite savo kompiuteryje.)

    Negalite skaityti šios el. knygos naudodami „Amazon Kindle“.

"Since the establishment of the Maxwell equation and the discovery of the electromagnetic wave, researchers have been devoted to develop a lot of technologies based on the electromagnetic wave, bringing much change in human life. High frequency electronics technology has provided radio, television, cellular phone, and so on. From optics and photonics, optical communication, LED lamp, endoscope, etc. have been produced"--

"This book tries to provide readers with the outlook for the future RF technology by presenting the state-of-the-art results in both new device development and circuit implementations. The book discusses key issues for the circuit operation beyond 100 GHz with respect to device physics, circuit implementations, signal generation, and some technological bottlenecks for system implementations. It presents implementation results using SiGe technologies alternative to CMOS devices"--

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

  • Discusses THz sensing and imaging devices based on nano devices and materials
  • Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
  • Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
  • Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications
  • Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more

An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

Recenzijos

"... a valuable reference for high-speed device and circuit researchers and design engineers." James Chu, Kennesaw State University, Marietta, Georgia, USA, from IEEE Microwave Magazine, November 2015

Preface xi
About the Editor xiii
Contributors xv
Chapter 1 Terahertz Technology Based on Nano-Electronic Devices
1(26)
Yukio Kawano
Chapter 2 Ultimate Fully Depleted (FD) SOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm
27(22)
Aryan Afzalian
Chapter 3 SiGe BiCMOS Technology and Devices
49(18)
Edward Preisler
Marco Racanelli
Chapter 4 SiGe HBT Technology and Circuits for THz Applications
67(26)
Jae-Sung Rieh
Chapter 5 Multiwavelength Sub-THz Sensor Array with Integrated Lock-In Amplifier and Signal Processing in 90 nm CMOS Technology
93(32)
Peter Foldesy
Chapter 6 40/100 GbE Physical Layer Connectivity for Servers and Data Centers
125(52)
Yongmao Frank Chang
Chapter 7 Equalization and Multilevel Modulation for Multi-Gbps Chip-to-Chip Links
177(22)
Anthony Chan Carusone
Chapter 8 25 G/40 G SerDes: Need, Architecture, and Implementation
199(18)
Rohit Mittal
Chapter 9 Clock and Data Recovery Circuits
217(22)
Jafar Savoj
Index 239
Jung Han Choi holds a BS and MS from the Sogang University, Seoul, Korea, and Dr.-Ing from the Technische Universität München, Germany. He currently works on high-data-bit-rate transmitter and receiver circuits, active/passive device modeling, and network analyzer measurement at the Fraunhofer Heinrich-Hertz Institute, Berlin, Germany. He previously served as a research scientist in the Institute for High-Frequency Engineering at the Technische Universität München, and was with the Samsung Advanced Institute of Technology and the Samsung Digital Media and Communication Research Center. In 2003, he received the EEEfCOM Innovation Prize for his contribution to the development of a high-speed receiver circuit.
Daugiau apie elektronines knygas Daugiau apie elektronines knygas
Pastovi nuoroda: https://www.kriso.lt/db/97814665901202e.html
Raktažodžiai: