This volume provides one of the first comprehensive reviews combining recent breakthroughs in blue/green semiconductor lasers based on II-VI materials and fundamentally important issues about the development and extension of these lasers to commercial applications. These lasers are on the cutting-edge of technology and could revolutionize areas such as optical information storage and color displays in the next few years.An important focus of this book is on the recent laboratory development of an entirely new class of diode lasers, based on a different family of semiconductor materials, which emit at much shorter wavelengths in the green and blue portion of the spectrum.These new and exciting developments in optoelectronics, which are still undergoing laboratory testing, have the potential of providing a major increase in storage capacity over current CD technology.Besides applications in high-density digital optical storage, other possible aplications for the compact blue-green lasers will be in areas ranging from flat panel displays to multicolor printing to medical diagnostics.
Key Features
* Details practical issues of the growth of laser structures by molecular beam epitaxy by pioneers in the industry
* Explains how the barriers of doping and electrical contact were overcome by using wide bandgap II-VI semiconductors
* Documents thirty years of research
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Key Features * Details practical issues of the growth of laser structures by molecular beam epitaxy by pioneers in the industry * Explains how the barriers of doping and electrical contact were overcome by using wide bandgap II-VI semiconductors * Documents thirty years of research
J. Han and R.L. Gunshor, MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors. S. Fujita and S. Fujita, Growth and Characterization of ZnSe-based II-VI Semiconductors by MOVPE. E.Ho and L.A. Kolodziejski, Gaseous Source UHV Epitaxy Technologies for Wide Bandgap II-VI Semiconductors. C.G. Van de Walle, Doping of Wide-Band-Gap II-VI Compounds--Theory. R. Cinolani, Optical Properties of Excitons in ZnSe-Based Quantum Well Heterostructures. A.V. Nurmikko and A. Ishibashi, II-VI Diode Lasers: A Current View of Device Engineering and Issues. S. Guha and J. Petruzello, Defects and Degradation in Wide Gap II-VI Based Structures and Light Emitting Devices. Subject Index.
Robert L. Gunshor received his B.E.E. in 1958 at New York University; his M.S.E. in 1962 at Union College in Schenectady, New York; and his Ph.D. in 1965 at Rensselaer Polytechnic Institute in Troy, New York. He is currently the Thomas Duncan Distinguished Professor of Microelectronics at Purdue University in West Lafayette, Indiana. Since 1983 he has been involved in the growth and optical, electrical, and microstructural characterization of a wide range of II-VI and II-VI/III-V semiconductor heterostructures. He is a fellow of the IEEE and the American Physical Society nd a member of the Materials Research Society.
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