| Preface |
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Introduction to Infrared Spectroscopy |
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1 | (14) |
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1 | (1) |
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Infrared spectroscopy and Raman spectroscopy |
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2 | (1) |
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Limitations of selection rules |
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3 | (1) |
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Overtones and combinations |
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3 | (1) |
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Conventional instrumentation for infrared spectroscopy |
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4 | (1) |
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Fourier Transform Infrared (FTIR) Spectrometer |
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4 | (1) |
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Advantages of FTIR over conventional DIR |
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5 | (1) |
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Definitions of common terms in infrared spectroscopy |
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6 | (1) |
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Elementary methods of quantitative analysis for infrared spectroscopy |
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7 | (1) |
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Reflectance infrared measurement |
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7 | (2) |
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Attenuated total reflection (ATR) infrared measurement |
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9 | (2) |
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Reflection absorption infrared measurement |
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11 | (4) |
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13 | (2) |
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The Properties of Infrared Transparent Substrates |
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15 | (10) |
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The significance of substrates in infrared spectroscopy |
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15 | (1) |
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Different types of infrared transparent substrates |
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15 | (1) |
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Factors that affect the infrared transparency of silicon |
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16 | (6) |
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Recommendations to reduce substrate effects |
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22 | (3) |
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23 | (2) |
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The Measurement of Oxygen and Carbon and Other Impurities in Silicon |
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25 | (20) |
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25 | (1) |
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25 | (1) |
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26 | (1) |
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The measurement of interstitial oxygen in silicon |
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27 | (1) |
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The measurement of substitutional carbon in silicon |
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28 | (1) |
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The determination of the absorption coefficient α for oxygen and carbon in silicon |
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28 | (2) |
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Limitations of the infrared method |
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30 | (1) |
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The infrared characterization of oxygen precipitates and thermal donors |
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31 | (1) |
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Carbon-oxygen complexes in silicon |
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32 | (3) |
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35 | (1) |
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Shallow impurities in silicon |
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36 | (1) |
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36 | (2) |
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The application of infrared spectroscopy to polysilicon |
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38 | (3) |
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Carbon and oxygen in gallium arsenide |
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41 | (1) |
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41 | (4) |
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41 | (4) |
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The Measurement of Epitaxial Layer Thickness |
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45 | (10) |
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45 | (2) |
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Optical interference in epitaxial layers |
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47 | (1) |
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Algorithm to measure the thickness of silicon epitaxial layers for a dispersive infrared spectrometer |
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47 | (1) |
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Measurement of epitaxial layer thickness by a reflectance FTIR spectrometer |
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48 | (2) |
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Emission FTIR for insitu measurement of epilayer thicker during the epitaxy process |
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50 | (5) |
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53 | (2) |
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The Characterization of Silicon Dioxide and Silicon Nitride Thin Films |
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55 | (32) |
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55 | (1) |
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The application of infrared spectroscopy to silicon dioxide films |
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56 | (16) |
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Silicon dioxide films grown by thermal oxidation |
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56 | (5) |
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Nitrided silicon dioxide films |
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61 | (2) |
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PECVD silicon dioxide films |
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63 | (2) |
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Silicon dioxide films deposited by the O3/TEOS CVD technique |
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65 | (1) |
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Fluorine-doped silicon dioxide films |
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66 | (6) |
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The application of infrared spectroscopy to silicon nitride films |
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72 | (8) |
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Hydrogen in PECVD silicon nitride |
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72 | (4) |
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The application of infrared spectroscopy to silicon-rich and nitrogen-rich PECVD silicon nitride |
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76 | (1) |
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The application of infrared spectroscopy to ECR PECVD silicon nitride films |
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77 | (1) |
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78 | (2) |
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The application of infrared spectroscopy to silicon oxynitride films |
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80 | (1) |
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80 | (7) |
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82 | (5) |
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The Characterization of PSG, BPSG, SOG and Other Glasses |
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87 | (18) |
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87 | (1) |
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Phosphorus content in PSG |
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88 | (2) |
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Boron content and phosphorus content in BPSG |
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90 | (4) |
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Stabilization of PSG and BPSG by annealing |
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94 | (1) |
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The detection of moisture penetration through silicon oxynitride passivation by infrared spectroscopy on PSG below passivation |
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94 | (3) |
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The application of infrared spectroscopy to spin-on-glass (SOG) |
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97 | (4) |
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The application of infrared spectroscopy to other glasses used in microelectronics |
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101 | (1) |
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102 | (3) |
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102 | (3) |
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The Characterization of Amorphous Silicon and Related Materials |
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105 | (20) |
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105 | (1) |
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Hydrogen content and bonding in hydrogenated amorphous silicon |
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106 | (3) |
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The application of infrared spectroscopy to hydrogenated amorphous silicon-germanium |
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109 | (3) |
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The application of infrared spectroscopy to hydrogenated amorphous silicon-carbide |
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112 | (3) |
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The application of infrared spectroscopy to diamond like carbon films |
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115 | (3) |
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118 | (1) |
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118 | (2) |
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120 | (1) |
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Microcrystalline silicon and related materials |
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121 | (4) |
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122 | (3) |
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Miscellaneous Applications of Infrared Spectroscopy to Microelectronics |
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125 | (30) |
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125 | (1) |
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The application of infrared spectroscopy to polyimides |
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125 | (2) |
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The application of infrared spectroscopy to silicon-on-insulator (SOI) and bonded silicon wafers |
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127 | (3) |
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128 | (1) |
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129 | (1) |
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The application of infrared spectroscopy to study the surface physics of silicon |
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130 | (3) |
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The application of infrared spectroscopy to study the cleaning of silicon |
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133 | (1) |
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The measurement of carbon, oxygen and other impurities in gallium arsenide |
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133 | (5) |
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The measurement of EL2 in semi-insulating gallium arsenide |
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138 | (3) |
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Hydrogen passivation in III-V semiconductors |
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141 | (2) |
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Hydrogen passivation in II-VI semiconductors |
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143 | (2) |
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Detection of crystalline defects by infrared light scattering tomography |
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145 | (4) |
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The application of infrared spectroscopy to microelectronics processing |
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149 | (1) |
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150 | (5) |
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150 | (5) |
| Appendix A |
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155 | (4) |
| Index |
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159 | |
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