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El. knyga: Mesoscopic Physics and Electronics

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  • Formatas: PDF+DRM
  • Serija: NanoScience and Technology
  • Išleidimo metai: 06-Dec-2012
  • Leidėjas: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • Kalba: eng
  • ISBN-13: 9783642719769
Kitos knygos pagal šią temą:
Mesoscopic Physics and ElectronicsDidesnis paveikslėlis
  • Formatas: PDF+DRM
  • Serija: NanoScience and Technology
  • Išleidimo metai: 06-Dec-2012
  • Leidėjas: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
  • Kalba: eng
  • ISBN-13: 9783642719769
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Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea­ ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog­ raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal­ oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

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Springer Book Archives
1. Introduction Mesoscopic Systems.- 1.1 Introduction.- 1.2 Length
Scales Characterizing Mesoscopic Systems.- 1.3 Landauers Formula.- 1.4
Fluctuations and AharonovBohm Effect.- 1.5 Ballistic Electron Transport.-
1.6 Coulomb Blockade.-
2. Transport in Quantum Structures.- 2.1
TomonagaLuttinger Liquid in Quantum Wires.- 2.2 Quantum Wires.- 2.3
Magnetophonon Resonance in Quantum Wires.- 2.4 Quantum Dots and Artificial
Atoms.- 2.5 Antidot Lattices Classical and Quantum Chaos.- 2.6 Electric and
Magnetic Lateral Superlattices.- 2.7 Terahertz Spectroscopy of
Nanostructures.- 2.8 WannierStark Effect in Transport.-
3. Quantum Hall
Effect.- 3.1 Crossover from Quantum to Classical Regime.- 3.2 Edge States and
Nonlocal Effects.- 3.3 Magnetocapacitance and Edge States.-
4.
Electron-Photon Interaction in Nanostructures.- 4.1 Introduction.- 4.2 Theory
of Electron-Photon Interaction.- 4.3 Electron-Photon Interaction in
Microcavities.- 4.4 Photonic Crystals.- 4.5 Microcavity Surface Emitting
Lasers.- 4.6 Toward Lasers of the Next Generation.-
5. Quantum-Effect
Devices.- 5.1 Introduction.- 5.2 Electron-Wave Reflection and Resonance
Devices.- 5.3 Electron-Wave Coherent Coupling Devices.- 5.4 Electron-Wave
Diffraction Devices.- 5.5 Devices Using Ultimate Silicon Technology.- 5.6
Circuit Systems Using Quantum-Effect Devices.-
6. Formation and
Characterization of Quantum Structures.- 6.1 Introduction.- 6.2 Quantum Wires
and Dots by MOCVD (I).- 6.3 Quantum Wires and Dots by MOCVD (II).- 6.4
Quantum Wires on Vicinal GaAs (110) Surfaces.- 6.5 Tilted T-Shaped and (775)B
Quantum Wires.- 6.6 SiGe Quantum Structures.
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