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Physics of Nanoelectronics: Transport and Fluctuation Phenomena at Low Temperatures [Minkštas viršelis]

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(, Grantee of the European Research Council)
  • Formatas: Paperback / softback, 296 pages, aukštis x plotis x storis: 246x189x14 mm, weight: 648 g, 194 b/w illustrations
  • Serija: Oxford Master Series in Physics 21
  • Išleidimo metai: 31-Jan-2013
  • Leidėjas: Oxford University Press
  • ISBN-10: 0199673497
  • ISBN-13: 9780199673490
Kitos knygos pagal šią temą:
Physics of Nanoelectronics: Transport and Fluctuation Phenomena at Low TemperaturesDidesnis paveikslėlis
  • Formatas: Paperback / softback, 296 pages, aukštis x plotis x storis: 246x189x14 mm, weight: 648 g, 194 b/w illustrations
  • Serija: Oxford Master Series in Physics 21
  • Išleidimo metai: 31-Jan-2013
  • Leidėjas: Oxford University Press
  • ISBN-10: 0199673497
  • ISBN-13: 9780199673490
Kitos knygos pagal šią temą:
Pastovi nuoroda: https://www.kriso.lt/db/9780199673490.html
Raktažodžiai:
Advances in nanotechnology have allowed physicists and engineers to miniaturize electronic structures to the limit where finite-size related phenomena start to impact their properties. This book discusses such phenomena and models made for their description. The book starts from the semiclassical description of nonequilibrium effects, details the scattering theory used for quantum transport calculations, and explains the main interference effects. It also describes how to treat fluctuations and correlations, how interactions affect transport through small islands, and how superconductivity modifies these effects. The last two chapters describe new emerging fields related with graphene and nanoelectromechanics. The focus of the book is on the phenomena rather than formalism, but the book still explains in detail the main models constructed for these phenomena. It also introduces a number of electronic devices, including the single-electron transistor, the superconducting tunnel junction refrigerator, and the superconducting quantum bit.

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Recenzijos

This is an excellent textbook on nanoelectronics, with clear explanations of the mesoscopic physics combined with discussions of nanoscale systems of current interest (e.g. Cooper pair boxes, NEMs). There is a good balance of physics, diagrams, and mathematical detail. It will be a valuable textbook for graduate students starting in the field of nanoelectronics. * Derek Lee, Imperial College London * This textbook provides an intermediate-level introduction to the very rich physics of nanoelectronics. The book treats in a balanced way the semi-classical and quantum transport regimes, and bridges up-to-date research topics, such as molecular electronics, graphene, NEMS, and full-counting statistics, with more traditional material. All theory is presented in a didactic way with clear focus on the experiments and physics without the use of heavy mathematical machinery. It is suited for a lecture course as well as for self-study with extensive references and starting points for further studies, and plenty of exercises. * Mads Brandbyge, Department of Micro- and Nanotechnology, Technical University of Denmark *

List of symbols
xviii
1 Introduction
1(14)
1.1 Studied systems
3(6)
1.1.1 Metallic wires and metal-to-metal contacts
4(2)
1.1.2 Semiconductor systems
6(1)
1.1.3 Carbon nanotubes and molecules
7(1)
1.1.4 Graphene
8(1)
1.2 Classical vs. quantum transport
9(6)
1.2.1 Drude formula
10(1)
1.2.2 Quantum effects
10(3)
Further reading
13(1)
Exercises
14(1)
2 Semiclassical theory
15(22)
2.1 Semiclassical Boltzmann equation
17(2)
2.2 Observables
19(1)
2.3 Relaxation time approximation
19(1)
2.4 Elastic scattering and diffusive limit
20(3)
2.4.1 Currents in the diffusive limit
22(1)
2.5 Inelastic scattering
23(5)
2.5.1 Electron-electron scattering
24(3)
2.5.2 Electron-phonon scattering
27(1)
2.6 Junctions
28(2)
2.7 Magnetic heterostructures
30(4)
2.8 Thermoelectric effects
34(3)
Further reading
35(1)
Exercises
36(1)
3 Scattering approach to quantum transport
37(23)
3.1 Scattering region, leads and reservoirs
38(6)
3.1.1 Transverse modes in semi-infinite leads
38(2)
3.1.2 Current carried by a transverse mode
40(1)
3.1.3 Wire between two reservoirs
41(1)
3.1.4 Quantum point contacts
42(2)
3.2 Scattering matrix
44(4)
3.2.1 Some properties of the scattering matrix
45(2)
3.2.2 Combining scattering matrices: Feynman paths
47(1)
3.3 Conductance from scattering
48(5)
3.3.1 Diffusive wire and Drude formula
51(2)
3.4 Resonant tunnelling
53(1)
3.5 Models for inelastic scattering and dephasing
54(1)
3.6 Further developments
55(5)
3.6.1 Time-dependent transport
55(1)
3.6.2 Non-linear transport
56(1)
3.6.3 Application to magnetic systems
56(2)
Further reading
58(1)
Exercises
58(2)
4 Quantum interference effects
60(18)
4.1 Aharonov-Bohm effect
61(1)
4.2 Localization
62(8)
4.2.1 Weak localization
64(1)
4.2.2 Localization length
65(1)
4.2.3 Weak localization from enhanced backscattering
65(2)
4.2.4 Dephasing
67(1)
4.2.5 Magnetic field effect on weak localization
68(2)
4.3 Universal conductance fluctuations
70(2)
4.3.1 Effect of dephasing
72(1)
4.4 Persistent currents
72(6)
Further reading
76(1)
Exercises
76(2)
5 Introduction to superconductivity
78(16)
5.1 Cooper pairing
78(1)
5.2 Main physical properties
79(5)
5.2.1 Current without dissipation
79(1)
5.2.2 Meissner effect
80(1)
5.2.3 BCS theory briefly
80(3)
5.2.4 Energy gap and BCS divergence
83(1)
5.2.5 Coherence length
83(1)
5.3 Josephson effect
84(2)
5.4 Main phenomena characteristic for mesoscopic systems
86(8)
5.4.1 Andreev reflection
86(2)
5.4.2 Andreev bound states
88(3)
5.4.3 Proximity effect
91(1)
Further reading
92(1)
Exercises
92(2)
6 Fluctuations and correlations
94(27)
6.1 Definition and main characteristics of noise
94(4)
6.1.1 Motivations for the study of noise
96(1)
6.1.2 Fluctuation-dissipation theorem
96(1)
6.1.3 Thermal and vacuum fluctuations
97(1)
6.1.4 Shot noise
97(1)
6.2 Scattering approach to noise
98(4)
6.2.1 Two-terminal noise
99(3)
6.3 Langevin approach to noise in electric circuits
102(2)
6.4 Boltzmann-Langevin approach
104(1)
6.5 Cross-correlations
105(3)
6.5.1 Equilibrium correlations
106(1)
6.5.2 Finite-voltage cross-correlations
106(2)
6.6 Effect of noise on quantum dynamics
108(6)
6.6.1 Relaxation
109(1)
6.6.2 Dephasing
110(4)
6.7 Full counting statistics
114(3)
6.7.1 Basic statistics
114(1)
6.7.2 Full counting statistics of charge transfer
115(2)
6.8 Heat current noise
117(4)
Further reading
118(1)
Exercises
118(3)
7 Single-electron effects
121(19)
7.1 Charging energy
121(3)
7.1.1 Single-electron box
123(1)
7.1.2 Single-electron transistor (SET)
124(1)
7.2 Tunnel Hamiltonian and tunnelling rates
124(3)
7.3 Master equation
127(2)
7.4 Cotunnelling
129(2)
7.5 Dynamical Coulomb blockade
131(4)
7.5.1 Phase fluctuations
133(2)
7.6 Single-electron devices
135(5)
7.6.1 Coulomb blockade thermometer
135(1)
7.6.2 Radio frequency SET
136(1)
7.6.3 Single-electron pump
137(1)
Further reading
138(1)
Exercises
139(1)
8 Quantum dots
140(19)
8.1 Electronic states in quantum dots
141(3)
8.1.1 Spectral function
142(2)
8.2 Weakly interacting limit
144(2)
8.3 Weakly transmitting limit: Coulomb blockade
146(5)
8.3.1 Metallic limit
149(1)
8.3.2 Two-state limit
149(1)
8.3.3 Addition spectrum
150(1)
8.3.4 Charge sensing with quantum point contacts
151(1)
8.4 Kondo effect
151(2)
8.5 Double quantum dots
153(6)
8.5.1 Artificial molecules
154(1)
8.5.2 Spin states in double quantum dots
154(1)
8.5.3 Pauli spin blockade
155(1)
8.5.4 Spin qubits in quantum dots
156(1)
Further reading
157(1)
Exercises
157(2)
9 Tunnel junctions with superconductors
159(24)
9.1 Tunnel contacts without Josephson coupling
159(3)
9.1.1 NIS contact
159(1)
9.1.2 SIS contact
160(1)
9.1.3 Superconducting SET
160(2)
9.2 SINIS heat transport and pumping
162(5)
9.2.1 Thermometry with (SI)NIS junctions
163(1)
9.2.2 Electron cooling and refrigeration
163(4)
9.3 Josephson junctions
167(5)
9.3.1 SQUIDs
167(2)
9.3.2 Resistively and capacitively shunted junction model
169(1)
9.3.3 Overdamped regime
170(1)
9.3.4 Underdamped regime
170(1)
9.3.5 Escape process
170(2)
9.4 Quantum effects in small Josephson junctions
172(11)
9.4.1 `Tight-binding limit'
173(1)
9.4.2 `Nearly free-electron limit'
174(3)
9.4.3 Superconducting qubits
177(4)
Further reading
181(1)
Exercises
181(2)
10 Graphene
183(20)
10.1 Electron dispersion relation in monolayer graphene
184(3)
10.1.1 Massless Dirac fermions in graphene
184(2)
10.1.2 Eigensolutions in monolayer graphene
186(1)
10.2 Bilayer and more
187(6)
10.2.1 Multilayer graphene
189(4)
10.3 Ray optics with electrons: np and npn junctions
193(3)
10.3.1 Graphene np junction
193(1)
10.3.2 Klein tunnelling
194(2)
10.4 Pseudodiffusion
196(2)
10.5 Graphene nanoribbons
198(5)
10.5.1 Zigzag ribbons
198(2)
10.5.2 Armchair ribbons
200(1)
Further reading
201(1)
Exercises
201(2)
11 Nanoelectromechanical systems
203(26)
11.1 Nanomechanical systems
205(6)
11.1.1 Basic elastic theory
205(1)
11.1.2 Flexular eigenmodes of a doubly clamped beam without tension
206(2)
11.1.3 Effect of tension on the vibration modes
208(1)
11.1.4 Driving and dissipation
209(2)
11.2 Coupling to nanoelectronics
211(5)
11.2.1 Magnetomotive actuation and detection
211(1)
11.2.2 Capacitive actuation and detection
212(2)
11.2.3 SQUID detection
214(1)
11.2.4 Detection through single-electron effects
215(1)
11.3 Coupling to microwave resonant circuits
216(6)
11.4 Quantum effects
222(7)
11.4.1 Creating a quantum superposition of vibration states in an oscillator-qubit system
223(3)
11.4.2 Describing dissipation
226(1)
Further reading
227(1)
Exercises
228(1)
A Important technical tools
229(14)
A.1 Second quantization: a short introduction
229(3)
A.1.1 Bosons
229(2)
A.1.2 Fermions
231(1)
A.2 Heisenberg and Schrodinger pictures
232(2)
A.2.1 Interaction picture
233(1)
A.3 Fermi golden rule
234(3)
A.3.1 Higher order: generalized Fermi golden rule
235(2)
A.4 Describing magnetic field in quantum mechanics
237(1)
A.5 Chemical potential and Fermi energy
237(3)
A.6 Pauli spin matrices
240(1)
A.7 Useful integrals
241(2)
Exercises
241(2)
B Current operator for the scattering theory
243(2)
C Fluctuation-dissipation theorem
245(4)
C.1 Linear response theory and susceptibility
245(2)
C.2 Derivation of the fluctuation-dissipation theorem
247(2)
D Derivation of the Boltzmann-Langevin noise formula
249(4)
E Reflection coefficient in electronic circuits
253(2)
References 255(20)
Index 275
Tero Heikkilä is a grantee of the European Research Council