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Self-Assembled InGaAs/GaAs Quantum Dots, Volume 60 [Kietas viršelis]

Series edited by (WILLARDSON CONSULTING SPOKANE, WASHINGTON), Series edited by (Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany), Volume editor (Optical Semiconductor Device Laboratory, Japan)
  • Formatas: Hardback, 368 pages, aukštis x plotis: 229x152 mm, weight: 770 g
  • Serija: Semiconductors and Semimetals
  • Išleidimo metai: 29-Mar-1999
  • Leidėjas: Academic Press Inc
  • ISBN-10: 0127521690
  • ISBN-13: 9780127521695
  • Formatas: Hardback, 368 pages, aukštis x plotis: 229x152 mm, weight: 770 g
  • Serija: Semiconductors and Semimetals
  • Išleidimo metai: 29-Mar-1999
  • Leidėjas: Academic Press Inc
  • ISBN-10: 0127521690
  • ISBN-13: 9780127521695
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.
The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.
The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Preface xi List of Contributors xv Theoretical Bases of the Optical Properties of Semiconductor Quantum Nano-Structures Mitsuru Sugawara Introduction 1(2) Electronic States of Semiconductor Quantum Nano-Structures 3(8) Interband Optical Transition 11(19) Linear and Nonlinear Optical Susceptibility 12(9) Spontaneous Emission of Photons 21(6) Rate Equations for Laser Operations 27(3) Excition Optical Properties 30(53) State Vectors 32(4) Effective-Mass Equations 36(7) Excition-Photon Interactions 43(4) Optical Absorption Spectra 47(8) Spontaneous Emission of Photons in Quantum Wells and Mesoscopic Quantum Disks 55(11) Spontaneous Emission of Photons in Quantum Disks Placed in a Planar Microcavity 66(11) The Coulomb Effect of Optical Gain Spectra 77(6) Quantum-Dot Lasers 83(24) The Effect of Carrier Relaxation Dynamics on Laser Performance 86(9) Effect of Homogeneous Broadening of Optical Gain on Lasing Emission Spectra 95(2) Bi-Excition Spontaneous Emission and Lasing 97(10) Summary 107(10) Appendix 107(5) References 112(5) Molecular Beam Epitaxial Growth of Self-Assembled InAs/GaAs Quantum Dots Yoshiaki Nakata Yoshihiro Sugiyama Mitsuru Sugawara Introduction 117(2) The Stranski-Krastanow Growth Mode 119(13) Energy-Balance Model for Island Formation 119(2) In As Island Growth 121(4) Multiple-Layer Growth and Perpendicular of Islands 125(5) In-Plane Alignment of Island 130(2) Closely Stacked InAs/GaAs Quantum Dots 132(11) Close Stacking of InAs Islands 133(4) Photoluminescence Properties 137(3) Zero-Dimensional Excition Confinement Evaluated by Diamagnetic Shifts 140(3) Columnar InAs/GaAs Quantum Dots 143(7) Summary 150(5) Acknowledgments 151(1) References 152(3) Metalorganic Vapor Phase Epitaxial Growth of Self-Assembled In GaAs/GaAs Quantum Dots Emitting at 1.3 μm Kohki Mukai Mitsura Sugawara Mitsuru Egawa Nobuyuki Ohtsuka Introduction 155(2) Atomic Layer Epitaxial Growth 157(3) Alternate Supply Growth of InGaAs Dots by In-As-Ga-As Sequence 160(6) Alternate Supply Growth of InGaAs Dots by The In-Ga-As Sequence 166(10) Two Types of ALS Dot 168(4) Multiple-Layer Growth 172(4) The Growth Process 176(4) Summary 180(3) References 181(2) Optical Characterization of Quantum Dots Kohki Mukai Mitsuru Sugawara Introduction 183(2) Light Emission From Discrete Energy States 185(11) Photoluminescence, Photoluminescence Excitation, and Electroluminescence Spectra 185(5) Wafer Mapping 190(2) Microprobe Photoluminescence 192(4) Controllability of Quantum Confinement 196(5) Two Methods of Controlling Quantized Energies 196(4) Magneto-Optical Spectroscopy 200(1) Radiative Emission Efficiency 201(6) Summary 207(2) References 208(1) The Photon Bottleneck Effect in Quantum Dots Kohki Mukai Mitsuru Sugawara Introduction 209(2) A Model of the Carrier Relaxation Process in Quantum Dots 211(3) Experiments on Light Emission and Carrier Relaxation in Quantum-Dot Discrete Energy Levels 214(15) Electroluminescence Spectra 215(2) Time-Resolved Photoluminescence 217(8) Simulation of Electroluminescence Spectra 225(4) Influence of Thermal Treatment 229(6) Change in Emission Spectra after Annealing 229(2) Competition between Carrier Relaxation and Recombination 231(4) Simulation of Laser Performance Including The Auger Relaxation Process 235(2) Summary 237(4) References 238(3) Self-Assembled Quantum Dot Lasers Hajime Shoji Introduction 241(2) Fundamental Properties of Quantum-Dot Lasers 243(6) Gain Characteristics 244(2) Threshold Current 246(2) Dynamic Characteristics 248(1) Fabrication of Self-Assembled Quantum-Dot Lasers 249(20) Fabrication 250(5) Device Characteristics 255(12) Limiting Factors of Laser Performance 267(2) Key Technologies for the Next Era 269(13) Closely Stacked Quantum-Dot Lasers 270(3) Columnar Quantum-Dot Lasers 273(3) Long-Wavelength Quantum-Dot Lasers 276(3) Quantum-Dot Vertical-Cavity Surface-Emitting Lasers 279(3) Conclusion 282(5) Acknowledgments 283(1) References 283(4) Applications of Quantum Dot to Optical Devices Hiroshi Ishikawa Introduction 287(1) Properties of Quantum Dots 288(7) The Quantum Dot as a Two-Level System 288(6) Attractive Features of Quantum Dots of Device Application 294(1) Quantum Dots for very High Speed Light Modulation 295(8) The Need for High-Speed, Low-Wavelength-Chirp Light Sources 295(3) Direct Modulation of Quantum-Dot lasers 298(4) The Quantum-Dot Intensity Modulator 302(1) Quantum Dots as a Nonlinear medium 303(11) The Need for Large Nonlinearity with a Large Bandwidth 303(3) Analysis x(3) 306(5) Discussion 311(3) Persistent Hole Burning Memory 314(5) Persistent Spectral Hole Burning Memory Using Quantum Dots 314(2) Experimental Results 316(3) Discussion 319(1) Summary and Perspective on Quantum-Dot Optical Devices 319(6) Trends in Optoelectronics 320(1) Uses for Quantum-Dot Optical Devices 321(1) Acknowledgment 321(1) References 321(4) The Latest News Mitsuru Sugawara Kohki Mukai Hiroshi Ishikawa Koji Otsubo Yoshiaki Nakata Lasing with Low-Threshold Current and High-Output Power From Columnar-Shaped Quantum Dots 325(3) Effect of Homogeneous Broadening of Single-Dot Output Gain on Lasing Spectra 328(3) Quantum Dots on InGaAs Substrates 331(2) Quantum Dots Emitting at 1.3 μM Grown by Low Growth Rates and with an InGaAs cap 333(3) Reduced-Temperature-Induced Variation of Spontanenous Emission in Alternate Supply (ALS) Quantum Dots Covered By In0.3Ga0.7As 336 References 337
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany