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Semiconductor Nanophotonics [Kietas viršelis]

(Retired Professor, Institute of Radio Physics and Electronics, University of Calcutta), (Assistant Professor, Institute of Radio Physics and Electronics, University of Calcutta), (Assistant Professor, ECE Department, National Institut)
  • Formatas: Hardback, 592 pages, aukštis x plotis x storis: 253x177x33 mm, weight: 1278 g, 174 line drawings and halftones
  • Serija: Series on Semiconductor Science and Technology 26
  • Išleidimo metai: 05-Apr-2022
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198784694
  • ISBN-13: 9780198784692
Kitos knygos pagal šią temą:
Semiconductor NanophotonicsDidesnis paveikslėlis
  • Formatas: Hardback, 592 pages, aukštis x plotis x storis: 253x177x33 mm, weight: 1278 g, 174 line drawings and halftones
  • Serija: Series on Semiconductor Science and Technology 26
  • Išleidimo metai: 05-Apr-2022
  • Leidėjas: Oxford University Press
  • ISBN-10: 0198784694
  • ISBN-13: 9780198784692
Kitos knygos pagal šią temą:
Pastovi nuoroda: https://www.kriso.lt/db/9780198784692.html
Raktažodžiai:
Nanometre sized structures made of semiconductors, insulators, and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to the confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose-Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gaps in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of Nanophotonics. The studies help develop spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high-speed computers working at THz bandwidth with less
than a few fJ/bit dissipation.

The present book is aimed at graduate students and researchers providing them with an introductory textbook on Semiconductor Nanophotonics. It gives an introduction to electron-photon interactions in Quantum Wells, Wires, and Dots and then discusses the processes in microcavities, photonic band gap materials, metamaterials, and related applications. The phenomena and device applications under strong light-matter interactions are discussed, mostly by using classical and semi-classical theories. Numerous examples and problems accompany each chapter.
List of Figures
xvii
List of Tables
xxviii
1 Introduction
1(21)
1.1 Introduction to Nanophotonics
1(3)
1.2 Nanophotonics: Scope
4(3)
1.3 Introduction to nanostructures
7(7)
1.4 Novel phenomena in Nanophotonics: A brief outline
14(1)
1.5 Applications of Nanophotonics
14(3)
1.6 Problems of integration
17(5)
Reading List
19(1)
References
20(2)
2 Basic properties of semiconductors
22(40)
2.1 Introduction
22(1)
2.2 Band structure
22(4)
2.3 Density of states
26(2)
2.4 Doping
28(1)
2.5 Carrier concentration
28(1)
2.6 Scattering mechanisms and transport
29(4)
2.7 Excess carriers and recombination
33(5)
2.8 Excitons
38(2)
2.9 Alloys and heterojunctions
40(2)
2.10 Quantum structures
42(11)
2.11 Strained layers
53(9)
Problems
57(3)
Reading List
60(1)
References
61(1)
3 Macroscopic theory of optical processes
62(22)
3.1 Introduction
62(1)
3.2 Optical constants
63(6)
3.3 Phase and group velocities
69(3)
3.4 Susceptibility of a material: A classical model
72(3)
3.5 Einstein's model for light-matter interaction
75(9)
Problems
81(2)
Reading List
83(1)
References
83(1)
4 Photons and electron-photon interactions
84(18)
4.1 Introduction
84(1)
4.2 Wave equation in a rectangular cavity
84(4)
4.3 Quantization of the radiation field
88(5)
4.4 Time-dependent perturbation theory
93(1)
4.5 Interaction of an electron with the electromagnetic field
94(6)
4.6 Second-order perturbation theory
100(2)
Problems
100(1)
Reading List
101(1)
5 Electron-photon interactions in bulk semiconductors
102(39)
5.1 Introduction
102(1)
5.2 Absorption processes in semiconductors
103(1)
5.3 Fundamental absorption in direct-gap
104(8)
5.4 Intervalence band absorption
112(1)
5.5 Free carrier absorption
113(3)
5.6 Recombination and luminescence
116(5)
5.7 Non-radiative recombination
121(7)
5.8 Carrier effect on absorption and refractive index
128(2)
5.9 Gain in semiconductors
130(11)
Problems
137(2)
Reading List
139(1)
References
140(1)
6 Optical processes in quantum wells
141(36)
6.1 Introduction
141(1)
6.2 Optical processes in quantum wells
142(1)
6.3 Interband absorption
143(6)
6.4 Intersubband absorption
149(5)
6.5 Recombination in quantum wells
154(2)
6.6 Loss processes in quantum wells
156(4)
6.7 Gain in quantum wells
160(8)
6.8 Strained quantum well lasers
168(9)
Problems
174(1)
Reading List
175(1)
References
176(1)
7 Excitons in semiconductors
177(49)
7.1 Introduction
177(1)
7.2 Excitons in bulk semiconductors
178(13)
7.3 Excitonic processes in quantum wells
191(15)
7.4 Effect of electric field in semiconductors
206(11)
7.5 Excitonic characteristics in fractional dimensional space
217(9)
Problems
221(1)
Reading List
222(1)
References
223(3)
8 Nanowires
226(28)
8.1 Introduction
226(1)
8.2 Quantum wires: Preliminaries
227(4)
8.3 Excitonic processes in quantum wires
231(7)
8.4 Classification of nanowires
238(1)
8.5 Growth of quantum wires
239(2)
8.6 Nanowires
241(2)
8.7 Properties of nanowires
243(5)
8.8 Applications of nanowires
248(6)
Problems
250(1)
Reading List
251(1)
References
252(2)
9 Nanoparticles
254(38)
9.1 Introduction
254(1)
9.2 Quantum dots
255(1)
9.3 Quantum dot growth mechanisms and structures
256(2)
9.4 Zero-dimensional systems
258(5)
9.5 Deviation from simple theory: Effect of broadening
263(1)
9.6 Quantum dot lasers: Structure and gain calculation
264(6)
9.7 Intersubband transitions
270(1)
9.8 Excitonic processes in quantum dots
271(9)
9.9 Classification of nanocrystals
280(1)
9.10 Synthesis of nanocrystals
281(1)
9.11 Core-shell structures
282(2)
9.12 Bright and dark excitons
284(1)
9.13 Biexcitons and trions
285(1)
9.14 Applications
286(6)
Problems
288(1)
Reading list
288(1)
References
289(3)
10 Optical microcavities
292(36)
10.1 Introduction
292(1)
10.2 Cavity fundamentals
293(6)
10.3 Fabry-Perot resonators
299(2)
10.4 Bragg gratings and Bragg mirrors
301(3)
10.5 Resonators
304(3)
10.6 Whispering gallery mode resonators
307(6)
10.7 Wave propagation in periodic structures: Photonic crystals
313(8)
10.8 Micropillar
321(1)
10.9 Microcavity
322(6)
Problems
324(1)
References
325(3)
11 Cavity quantum electrodynamics
328(42)
11.1 Introduction
328(2)
11.2 Zero-point energy and vacuum field
330(1)
11.3 Control of spontaneous emission
331(5)
11.4 Mode density in ideal cavities
336(5)
11.5 Experimental observation of Purcell effect
341(2)
11.6 Strong light-matter coupling
343(8)
11.7 Jaynes--Cummins model
351(5)
11.8 Microcavities in cavity quantum electrodynamics experiments
356(5)
11.9 Applications
361(1)
11.10 Microcavity laser
361(9)
Problems
365(1)
References
366(4)
12 Bose--Einstein condensation
370(38)
12.1 Introduction
370(1)
12.2 Elements of Bose-Einstein condensation
371(5)
12.3 BEC in semiconductors
376(1)
12.4 Bulk excitons
377(2)
12.5 Indirect excitons in coupled quantum wells
379(3)
12.6 Polariton
382(13)
12.7 Polariton lasers
395(4)
12.8 Modelling of electrically driven polariton laser
399(9)
Problems
403(1)
References
404(4)
13 Surface plasmon
408(42)
13.1 Introduction
408(2)
13.2 Basic concepts
410(6)
13.3 Surface plasmon polaritons at metal/insulator interfaces
416(9)
13.4 Excitation mechanism
425(1)
13.5 Materials
426(2)
13.6 Length scales in noble metals
428(2)
13.7 Metal-insulator based plasmonics-Photonics
430(1)
13.8 All semiconductor plasmonics
430(1)
13.9 Plasmonic properties of semiconductors
431(7)
13.10 Components: Source, modulators, waveguides, detector
438(3)
13.11 Application of plasmonics in very large-scale integrated data centres and supercomputers
441(2)
13.12 Applications of surface plasmons in basic science and characterization
443(1)
13.13 Intersubband plasmons
444(6)
Problems
445(1)
References
446(4)
14 Spasers, and plasmonic nanolasers
450(31)
14.1 Introduction
450(1)
14.2 Early investigations on surface plasmon amplification
451(6)
14.3 Models for the Noginov et al experiment
457(1)
14.4 Semiconductor spasers and plasmonic nanolasers
458(1)
14.5 Theoretical models by Khurgin and Sun
459(9)
14.6 Current theoretical models and experiments
468(7)
14.7 Further developments
475(6)
Problems
477(1)
References
478(3)
15 Optical metamaterials
481(34)
15.1 Introduction
481(2)
15.2 Left-handed material with negative refractive index
483(1)
15.3 Structures for microwaves
484(2)
15.4 Perfect lens
486(1)
15.5 Negative index of refraction with positive permittivity and permeability
486(10)
15.6 Low-loss plasmonic metamaterial
496(2)
15.7 Semiconductor metamaterials
498(5)
15.8 Metasurfaces
503(6)
15.9 Beam steering
509(6)
Problems
510(1)
References
511(4)
16 Nanolasers
515(23)
16.1 Introduction
515(2)
16.2 Parameters of lasers
517(4)
16.3 Progress in nanolasers
521(1)
16.4 Threshold pump power of nanolasers: Purcell effect
521(6)
16.5 Intrinsic merits of nanolasers
527(3)
16.6 Optical interconnect
530(3)
16.7 Metal-based nanolasers
533(5)
Problems
538(1)
References 538(4)
Index 542
Prasanta Kumar Basu (B.Sc honours in Physics), B. Tech, M.Tech and Ph.D. (all in Radio Physics and Electronics) joined the RPE department of Calcutta University as a Lecturer in 1971. His research has been in semiconductors. He is an Alexander von Humboldt fellow and he also worked as Visiting Professors in McMaster University, Canada, National Chung Cheng University, Taiwan, and TIFR, India. He was in several administrative positions in RPE department. After his retirement from CU in 2011, he worked as a UGB BSR Faculty fellow, then as Visiting Professor in IIT Kharagpur and finally as an investigator in a joint Indo Taiwan project. Since 2019, he is engaged in honorary collaborative research and book writing in RPE department.



Bratati Mukhopadhyay received the B.Sc (Hons in Physics)., B.Tech., M.Tech., and Ph.D. degrees from the University of Calcutta, Kolkata, India, in 1994, 1997, 1999, and 2007, respectively. She joined Institute of Radio Physics and Electronics, CU, as a Lecturer in 2008. Her research area includes Group IV photonics, transport and scattering in semiconductor nanostructures, nanoscale FETs, etc. In addition, she is one of the authors of a book Semiconductor Laser Theory (CRC Press, 2015). She teaches CMOS analog circuit, VLSI design, guidedwave photonics, and photonic devices, in addition to semiconductor related subjects. She also supervises a number of B.Tech. and M.Tech. projects and guides several Ph.D. students.

Rikmantra Basu (B.Sc honours in Physics), B. Tech (IT), M.Tech (RPE) and Ph.D. (CUNN) all from Calcutta University joined as an Assistant Professor in the ECE department of BITS Pilani in 2013 and then in the ECE department of NIT Delhi in 2014. His research is in Semiconductor photonic devices, Group IV photonics and plasmonics, sensors at mid IR using GeSn alloys, and biosensors on graphene. He is the recipient of URSI Young Scientist award and he worked as visiting Scientist in Bristol University, UK and National Chung Cheng University, Taiwan. He has guided and is guiding several M. Tech and Ph.D. students.