Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Metal-organic chemical vapour deposition (MOCVD) of Group III nitrides,
S.P. DenBaars, S. Keller; Growth of the Group IIIA nitrides b reactive
sputtering, W.A. Bryden, T.J. Kistenmacher; Thermochemistry of III-N
semiconductors, N. Newman; Etching of III-nitrides, S.J. Pearton, R.J. Shul;
Indium-based nitrides compounds, S.M. Bedair; Crustal structure of Group III
nitrides, A. Trampert et al; Electronic and optical properties of III-v
nitride-based quantum wells and superlattices, H. Markoc et al; Doping in the
II-nitrides, K. Doverspike, J.I. Pankave; Pressure studies of defects and
impurities in gallium nitride, T. Suski, P. Perlin; Optical properties of
GaN, B. Monemar; Band structure of the Group III nitrides, W.R.L. Lambrecht;
Phonons and phase transitions in GaN, N.E. Christensen, P. Perlin;
Applications, S. Nakamura; Lasers, I. Akasaki, H. Amano; III-v nitrides based
X-Ray detector, C.H. Qiu, J.I. Pankawe; Nonvolatile random-access memories in
wide band-gap semiconductors, J.A. Cooper, Jr.
