This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
LIST OF CONTRIBUTORS ix(2) INTRODUCTION xi
Chapter 1 Materials Properties and Characterization of SiC 1(20) Kenneth Jarrendahl Robert F. Davis I. Introduction 1(1) II. Structural Properties 2(12)
1. SiC Polytypes: Structure and Symbolic Notations 2(5)
2. Lattice Parameter and Related Properties 7(5)
3. Mechanical Properties 12(2) III. Thermal Properties 14(1) IV. Optical Properties 14(2) V. Electrical Properties 16(1) VI. Summary 17(1) References 18(3)
Chapter 2 SiC Fabrication Technology: Growth and Doping 21(56) V. A. Dmitriev M. G. Spencer I. Introduction 21(1) II. SiC Bulk Crystal Growth 22(13)
1. Bulk Growth by Physical Vapor Transport 22(12)
2. Bulk Growth by Chemical Vapor Deposition 34(1)
3. Bulk Growth from the Liquid Phase 34(1) III. SiC Epitaxial Growth 35(25)
1. Chemical Vapor Deposition 36(14)
2. Liquid-Phase Epitaxy 50(6)
3. Sublimation Epitaxy 56(2)
4. Molecular Beam Epitaxy 58(2) IV. SiC Doping 60(2)
1. Impurities in SiC 60(1)
2. Doping During Crystal Growth 60(1)
3. Diffusion of Impurities in SiC 61(1)
4. Ion Implantation 61(1) V. Conclusions 62(1) References 63(14)
Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions 77(84) V. Saxena A. J. Steckl I. Introduction 77(4) II. Electrical Properties of Metal-SiC Systems 81(5)
1. The Schottky-Mott and Bardeen Limits for Barrier Height 81(3)
2. Metal Contacts for High-Power Applications 84(2) III. Surface Preparation Techniques 86(1) IV. Metal Contacts to 6H-SiC 87(31)
1. Ohmic Contacts to 6H-SiC 87(9)
2. Schottky Contacts to 6H-SiC 96(13)
3. High-Voltage Schottky Diodes on 6H-SiC 109(4)
4. Edge Termination in 6H-SiC Schottky Diodes 113(1)
5. Excess Leakage Current in SiC Schottky Diodes 114(4) V. Metal Contacts to 4H-SiC 118(7)
1. Ohmic Contacts to 4H-SiC 118(1)
2. Schottky Contacts and High-Voltage Schottky Diodes on 4H-SiC 118(7) VI. Metal Contacts to 3C-SiC 125(6)
1. Ohmic Contacts to 3C-SiC 125(1)
2. Schottky Contacts and Diodes on 3C-SiC 126(5) VII. SiC p-n Junctions Diode Rectifiers 131(18)
1. 3C-SiC p-n Junctions 133(5)
2. 6H-SiC p-n Junctions 138(9)
3. 4H-SiC p-n Junctions 147(2) VIII. Summary and Conclusions 149(2) References 151(10)
Chapter 4 SiC Transistors 161(34) Michael S. Shur I. Introduction 161(1) II. SiC Field-Effect Transistors: MOSFETs, MESFETs, and JFETs 162(15)
1. Principle of Operation 162(6)
2. SiC MOSFETs 168(6)
3. SiC MESFETs and JFETs 174(3) III. SiC Microwave Field-Effect Transistors 177(3) IV. SiC Digital Integrated Circuits 180(2) V. SiC Bipolar Transistors and Thyristors 182(3) VI. Two-Dimensional Modeling of SiC Transistors 185(1) VII. Analytical Transistor Models and Circuit Simulation (AIM-Spice) 186(2) VIII. Potential Performance and Applications of SiC Transistors and Integrated Circuits 188(1) References 189(6)
Chapter 5 SiC for Applications in High-Power Electronics 195(42) C. D. Brandt R. C. Clarke R. R. Siergiej J. B. Casady A. W. Morse S. Sriram A. K. Agarwal I. Introduction 195(3) II. Bulk SiC Growth 198(4) III. Epitaxial Growth of SiC 202(2) IV. Advantages of SiC for High-Power RF Systems 204(1) V. The SiC MESFET: Design Considerations 205(2) VI. MESFET Fabrication 207(2) VII. 6H-SiC MESFET Results 209(2) VIII. 4H-SiC MESFET Results 211(1) IX. The SiC SIT: Design Considerations 212(3) X. SIT Fabrication 215(2) XI. 6H-SiC SIT Results 217(2) XII. 4H-SiC SIT Results 219(2) XIII. 450 W UHF SIT 221(1) XIV. 2.0k W UHF Module 222(1) XV. S-band SiC SITs 223(1) XVI. S-band SIT Device Scale-up 224(2) XVII. SiC Power Switching Devices 226(5) XVIII. Conclusions 231(1) References 232(5)
Chapter 6 SiC Microwave Devices 237(46) R. J. Trew I. Introduction 237(2) II. Background 239(2) III. Semiconductor Material and Contact Properties 241(6) IV. Semiconductor Device Models 247(3) V. Temperature Effects 250(2) VI. RF Active Devices 252(27)
1. MESFETs 253(11)
2. SiC Static Induction Transistors 264(3)
3. Bipolar Transistors 267(5)
4. IMPATT Diodes 272(7) VII. Summary 279(1) References 280(3)
Chapter 7 SiC-Based UV Photodiodes and Light Emitting Diodes 283(24) J. Edmond H. Kong G. Negley M. Leonard K. Doverspike W. Weeks A. Suvorov D. Waltz C. Carter, Jr. I. Introduction 283(3) II. SiC Blue LEDs 286(2)
1. Epitaxy and Device Fabrication 286(1)
2. Device Performance 287(1) III. SiC Green LEDs 288(2)
1. Epitaxy and Ion Implantation 288(1)
2. Device Performance 289(1) IV. UV Photodiodes 290(7)
1. Device Fabrication 290(2)
2. Electrical Characteristics 292(2)
3. Optical Responsivity 294(2)
4. Applications 296(1) V. Group III-Nitrides on 6H-SiC 297(8)
1. Epitaxial Growth, Characterization, and Device Fabrication 297(1)
2. Hall Effect 298(2)
3. Photoluminescence 300(2)
4. GaN: SiC Blue LEDs 302(3)
5. Electrical Static Discharge Survivability 305(1) VI. Summary 305(1) References 306(1)
Chapter 8 Beyond Silicon Carbide! III-V Nitride-Based Heterostructures and Devices 307(88) Hadis Morkoc I. Introduction 307(2) II. Strain and Structural Defects 309(26)
1. Effect of Strain and Lattice Mismatch on Crystal Structure 309(1)
2. Dislocations 310(1)
3. Stacking Fault Defects 311(2)
4. Point Defects 313(7)
5. P-Type Doping by Mg vis-a-vis Defects 320(10)
6. Defect Analysis by Deep-Level Transient Spectroscopy 330(3)
7. Defect-Aided Current in Unintentionally Doped GaN 333(2) III. Optical Manifestation of Defects 335(7)
1. Yellow Band 335(4)
2. Defects Caused by P-Type Doping in GaN 339(3) IV. Applications 342(47)
1. Field-Effect Transistors 342(31)
2. Blue, Green, and Yellow LEDs 373(5)
3. LEDs by MBE 378(2)
4. Lasers in Semiconductor Nitrides 380(5)
5. UV Detectors 385(4) V. Conclusions 389(1) References 390(5) INDEX 395(10) CONTENTS OF VOLUMES IN THIS SERIES 405
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
