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Circuit Design Techniques for Non-Crystalline Semiconductors [Kietas viršelis]

3.00/5 (2 ratings by Goodreads)
(Bangalore, India)
  • Formatas: Hardback, 264 pages, aukštis x plotis: 234x156 mm, weight: 514 g, 99 Illustrations, black and white
  • Išleidimo metai: 16-Oct-2012
  • Leidėjas: CRC Press Inc
  • ISBN-10: 1439846324
  • ISBN-13: 9781439846322
Kitos knygos pagal šią temą:
Circuit Design Techniques for Non-Crystalline SemiconductorsDidesnis paveikslėlis
  • Formatas: Hardback, 264 pages, aukštis x plotis: 234x156 mm, weight: 514 g, 99 Illustrations, black and white
  • Išleidimo metai: 16-Oct-2012
  • Leidėjas: CRC Press Inc
  • ISBN-10: 1439846324
  • ISBN-13: 9781439846322
Kitos knygos pagal šią temą:
Pastovi nuoroda: https://www.kriso.lt/db/9781439846322.html
Raktažodžiai:
"Written for students and professionals within the fields of Materials Science and Engineering, Electronics Engineering, and Applied Physics, this reference provides a systematic means to synthesize circuits with disordered semiconductor field effect transistors (DS-FETs) and explanation of the issues involved. It offers examples on how self-assembly, structural and functional, can be used as a powerful tool in circuit synthesis and provides starting threads for new and future research. The first book tofocus on disordered semiconductors, the text covers theory, materials, techniques, and applications, as well as offer practical solutions for semiconductor use in devices"--



Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Crystalline Semiconductors outlines a systematic design approach, including circuit theory, enabling users to synthesize circuits without worrying about the details of device physics.

This book:

  • Offers examples of how self-assembly can be used as a powerful tool in circuit synthesis

  • Covers theory, materials, techniques, and applications

  • Provides starting threads for new research


This area of research is particularly unique since it employs a range of disciplines including materials science, chemistry, mechanical engineering and electrical engineering. Recent progress in complementary polymer semiconductors and fabrication techniques such as ink-jet printing has opened doors to new themes and ideas. The book focuses on the central problem of threshold voltage shift and concepts related to navigating this issue when using non-crystalline semiconductors in electronic circuit design. Designed to give the non-electrical engineer a clear, simplified overview of fundamentals and tools to facilitate practical application, this book highlights design roadblocks and provides models and possible solutions for achieving successful circuit synthesis.

Recenzijos

"Macroelectronics has elicited much excitement in the past 10 years. There is however a clear disconnect between people who study materials or single devices and engineers who try to design circuits with these devices ... This is the first book I have seen where these issues are addressed explicitly. The author provides a few insights on strategies but in addition with the information contained in this book, practitioners have all the tools they need to come-up with designs and strategies of their own ... This book will be very useful to anyone who wants to take devices made with new non-crystalline semiconductors out of the lab and into the world of applications." --Alberto Salleo, Stanford University

"a well-organized reference that would be helpful to experts and students in the field of large-area electronics. The topics discussed could be used in a wide range of applications from conventional thin-film transistors to printed electronics." --William S. Wong, University of Waterloo "Macroelectronics has elicited much excitement in the past 10 years. There is however a clear disconnect between people who study materials or single devices and engineers who try to design circuits with these devices ... This is the first book I have seen where these issues are addressed explicitly. The author provides a few insights on strategies but in addition with the information contained in this book, practitioners have all the tools they need to come-up with designs and strategies of their own ... This book will be very useful to anyone who wants to take devices made with new non-crystalline semiconductors out of the lab and into the world of applications." --Alberto Salleo, Stanford University

"a well-organized reference that would be helpful to experts and students in the field of large-area electronics. The topics discussed could be used in a wide range of applications from conventional thin-film transistors to printed electronics." --William S. Wong, University of Waterloo

I Fundamentals
1(72)
1 Resistor-Capacitor Circuits
3(14)
1.1 The Four Primary Circuit Elements
3(1)
1.2 Resistor
4(2)
1.2.1 Resistance and Ohm's Law
4(1)
1.2.2 Resistivity
5(1)
1.2.3 Power Consumption in a Resistor
6(1)
1.3 Capacitor
6(3)
1.3.1 Capacitance and Charge on a Capacitor
6(2)
1.3.2 Current through a Capacitor
8(1)
1.3.3 Equivalent Impedance of a Capacitor
8(1)
1.3.4 Energy Stored in a Capacitor
9(1)
1.4 Series Resistor-Capacitor (RC) Circuit
9(1)
1.4.1 Capacitor Charging
9(1)
1.4.2 Capacitor Discharging
10(1)
1.5 Charge Sharing between Capacitors
10(2)
1.6 Filtering Property of RC Circuits
12(2)
1.7 Impedance of the RC Circuit
14(1)
1.8 Conclusion
14(3)
2 Fundamentals of Semiconductor Devices
17(34)
2.1 Energy Levels and Energy Bands
18(1)
2.2 Metals, Semiconductors, Insulators
18(1)
2.3 Semiconductor Fundamentals
19(10)
2.3.1 Carriers
20(1)
2.3.1.1 Free Electrons and Holes
20(1)
2.3.1.2 Effective Mass
20(1)
2.3.2 Density of States
20(1)
2.3.3 The Fermi Level and Fermi Function
21(2)
2.3.4 Number of Carriers
23(2)
2.3.5 Doping
25(2)
2.3.6 Mass-Action Law
27(1)
2.3.7 Charge Transport
27(1)
2.3.7.1 Drift Current
27(1)
2.3.7.2 Diffusion Current
28(1)
2.4 Semiconductor Junctions
29(1)
2.5 Metal-Semiconductor Junction
30(6)
2.5.1 Rectifying contact
31(1)
2.5.1.1 Analysis of the Electrostatics at Junctions
32(2)
2.5.1.2 Currents across the Junction
34(1)
2.5.1.3 Impedance of the Schottky diode
35(1)
2.5.1.4 Rectifying Contact with p-type Semiconductor
35(1)
2.5.2 Ohmic Contact
35(1)
2.6 p-n Junction
36(3)
2.6.1 Analysis of p-n Junction
37(1)
2.6.2 Currents across the Junction
38(1)
2.7 Transistors
39(11)
2.7.1 MOS Capacitor
39(1)
2.7.1.1 Structure
39(1)
2.7.1.2 Operation
40(1)
2.7.1.3 Analysis
41(2)
2.7.1.4 Capacitance-Voltage Characteristics
43(1)
2.7.2 Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
44(1)
2.7.2.1 Structure
45(2)
2.7.2.2 Current Voltage Characteristics
47(3)
2.8 Conclusion
50(1)
3 Circuit Analysis of MOSFET Circuits
51(22)
3.1 MOSFET Operation and its Impact in Circuit Design
52(1)
3.2 Small Signal Analysis of MOSFET Circuits
53(7)
3.2.1 Small Signal Gate Bias Fluctuations
54(1)
3.2.2 Small Signal Drain Bias Fluctuations
55(1)
3.2.3 Impedance Analysis of MOSFET Circuits
55(2)
3.2.3.1 Example
57(1)
3.2.4 Transfer Function Analysis of MOSFET Circuits
58(1)
3.2.4.1 Example
59(1)
3.3 High Frequency Response of MOSFET Circuits
60(4)
3.3.1 Capacitive Components in a MOSFET
60(1)
3.3.2 Frequency Response
61(1)
3.3.2.1 Miller Effect and Miller Capacitances
61(1)
3.3.2.2 Example
62(2)
3.4 Noise in Circuits
64(7)
3.4.1 Representation of Noise
64(1)
3.4.1.1 Probability Density Function
64(1)
3.4.1.2 Noise Power
65(1)
3.4.1.3 Power Spectrum
65(1)
3.4.2 Types of Noise
66(1)
3.4.2.1 Thermal Noise
66(1)
3.4.2.2 Shot Noise
67(1)
3.4.2.3 Flicker Noise
67(1)
3.4.3 Noise in Field Effect Transistors
68(1)
3.4.3.1 Thermal Noise
68(1)
3.4.3.2 Shot Noise
68(1)
3.4.3.3 Flicker Noise
68(1)
3.4.4 Noise in MOSFET Circuits
69(1)
3.4.4.1 Representing Noise in MOSFET Circuits
69(1)
3.4.4.2 Example
70(1)
3.5 Conclusion
71(2)
II Non Crystalline Semiconductors
73(28)
4 Non-Crystalline Semiconductors
75(6)
4.1 Introduction to Non-Crystalline Semiconductors
75(2)
4.2 Structure and Electronic Transport
77(2)
4.2.1 Inorganic Semiconductors
77(1)
4.2.2 Polymer Semiconductors
78(1)
4.3 Thin Film Transistors
79(1)
4.4 Conclusion
80(1)
5 Device Physics of Thin Film Transistors
81(12)
5.1 Density of States in Non-Crystalline Semiconductors
81(2)
5.1.1 Exponential Density of States
82(1)
5.1.2 Trapped Charge Density
82(1)
5.1.3 Free Charge Density
83(1)
5.2 Device Physics of TFTs
83(3)
5.2.1 MOS Capacitor
83(1)
5.2.2 Forward Subthreshold Operation
84(1)
5.2.3 Above Threshold Operation
85(1)
5.3 Transfer Characteristics of the TFT
86(2)
5.4 Mobility
88(1)
5.5 Threshold Voltage Shift
88(3)
5.5.1 Mechanics of Charge Trapping
88(1)
5.5.2 Dynamics of Defect Creation and Threshold Voltage Shift
89(1)
5.5.3 Threshold Voltage Recovery
90(1)
5.5.4 Drain-Source Bias Dependence
90(1)
5.6 Conclusion
91(2)
6 Modeling Threshold Voltage Shift for Circuit Design
93(8)
6.1 Constant Gate Bias
94(2)
6.2 Removal of Gate Bias
96(1)
6.3 Variable Gate Bias
96(4)
6.3.1 Generalizations
96(1)
6.3.2 Thought Experiments
97(1)
6.3.2.1 First Thought Experiment
97(1)
6.3.2.2 Second Thought Experiment
97(3)
6.4 Conclusion
100(1)
III Thin Film Transistor Circuits and Applications
101(114)
7 Transistor as a Switch
103(16)
7.1 Transistor Biasing for Switch Operation
105(1)
7.2 On Resistance
106(6)
7.3 Off Resistance
112(1)
7.4 Switching Time
113(1)
7.5 Parasitics
114(4)
7.5.1 Threshold Voltage Shift
114(1)
7.5.2 Clock Feedthrough
115(1)
7.5.3 Charge Injection
115(3)
7.6 Conclusion
118(1)
8 Diode Connected Transistor
119(10)
8.1 Circuit Configuration and Operation
119(2)
8.2 Applications
121(6)
8.2.1 Circuit Biasing
122(1)
8.2.2 Threshold Voltage Shift Compensation
122(4)
8.2.3 Peak Detect Circuit
126(1)
8.3 Conclusion
127(2)
9 Basic Circuits
129(16)
9.1 Analog and Digital Circuits
129(1)
9.2 Current Mirrors
130(1)
9.3 Voltage Amplifiers
130(5)
9.3.1 Common Source Amplifier
131(1)
9.3.2 Common Drain Amplifier
132(2)
9.3.3 Common Gate Amplifier
134(1)
9.4 Digital Inverter
135(2)
9.5 Ring Oscillators
137(1)
9.6 Static Random Access Memories
138(2)
9.7 Logic Gates
140(3)
9.7.1 Static Logic Gates
140(2)
9.7.2 Dynamic Logic
142(1)
9.8 Shift Registers
143(1)
9.9 Conclusion
144(1)
10 Large-Area Electronic Systems
145(12)
10.1 Large-area Electronic Systems
146(1)
10.2 Displays
147(5)
10.2.1 Design of Pixel Circuits for Field and Current Controlled Actuators
147(1)
10.2.1.1 Field Controlled Actuators
147(1)
10.2.1.2 Current Controlled Actuators
147(2)
10.2.2 Design Constraints
149(1)
10.2.2.1 Programming Time
150(1)
10.2.2.2 Power Consumption
151(1)
10.2.2.3 Leakage
151(1)
10.3 Sensors
152(3)
10.3.1 Design of Pixel Circuits for Sensors
152(1)
10.3.2 Noise
153(1)
10.3.2.1 Noise from the Sensor
153(1)
10.3.2.2 Noise from Reset
153(1)
10.3.2.3 TFT Flicker and Thermal Noise
154(1)
10.3.2.4 Threshold Voltage Shift
154(1)
10.3.2.5 External Readout Noise
154(1)
10.3.3 Overcoming Noise
154(1)
10.4 Conclusion
155(2)
11 Compensation Circuits for Displays
157(8)
11.1 Compensating for Threshold Voltage Shift
157(1)
11.2 Voltage Programmed Compensation Circuits
158(2)
11.2.1 Capacitor-Diode TFT based Circuits
158(2)
11.2.2 Mirror TFT based Circuits
160(1)
11.3 Current Programmed Compensation Circuits
160(2)
11.3.1 Capacitor-Diode TFT based Circuits
161(1)
11.3.2 Mirror TFT based Circuits
161(1)
11.4 Other Compensation Circuits for Display Applications
162(2)
11.4.1 Feedback based Compensation
162(1)
11.4.2 Statistics based Software compensation
163(1)
11.5 Conclusion
164(1)
12 Self Compensation of Threshold Voltage Shift
165(30)
12.1 The Dancing House Analogy
166(1)
12.2 Graphical Representation of a TFT
166(4)
12.2.1 Constant Voltage Bias
167(1)
12.2.2 Constant Current Bias
167(1)
12.2.3 Equivalence of Current and Voltage Bias
167(1)
12.2.4 Modular Representation of the TFT
168(1)
12.2.5 Time Varying Bias
169(1)
12.2.5.1 Voltage Bias
169(1)
12.2.5.2 Current Bias
170(1)
12.3 Simple TFT Circuits as Node Diagrams
170(3)
12.3.1 Voltage Input
170(3)
12.3.2 Current Input
173(1)
12.4 Paradigm for Circuit Synthesis
173(2)
12.5 Building Blocks
175(13)
12.5.1 Voltage Amplifier
175(1)
12.5.1.1 Time Zero Behavior
175(2)
12.5.1.2 Evolution with Time
177(1)
12.5.1.3 Implications
178(1)
12.5.1.4 Experimental Verifications
178(1)
12.5.1.5 Time Varying Input Voltage
178(4)
12.5.2 Current Mirror
182(1)
12.5.2.1 Time Zero Behavior
182(2)
12.5.2.2 Evolution with Time
184(1)
12.5.2.3 Implications
184(1)
12.5.3 Experiments
184(1)
12.5.4 Time Varying Input Current
185(3)
12.6 Extending the Design Paradigm
188(6)
12.6.1 Cascode Voltage Amplifiers
189(1)
12.6.2 Translinear Circuits
189(1)
12.6.3 Feedback Loops
189(5)
12.7 Examples
194(1)
12.8 Conclusion
194(1)
13 Case Study --- Pseudo PMOS Field Effect Transistor
195(20)
13.1 Role of Complementary Devices
196(6)
13.1.1 TFT as Current Sources and Sinks
196(1)
13.1.2 Benefits of a Complementary Device
196(2)
13.1.2.1 n-type TFT Load
198(1)
13.1.2.2 p-type TFT Load
199(3)
13.2 High Impedance Load with a Non-Complementary Process
202(13)
13.2.1 Design of the High Impedance Load
202(1)
13.2.1.1 The Concept
202(2)
13.2.1.2 Circuit Design --- The "Adder"
204(3)
13.2.1.3 Circuit design --- The n-type Current Source
207(1)
13.2.1.4 Circuit Design --- The High Gain Amplifier
207(8)
IV Appendix
215(6)
14 Appendix --- Derivation of the Threshold Voltage Shift Model
217(4)
14.1 State Space Form of Charge Trapping
217(1)
14.2 Solving for nf(t) and ns(t)
218(1)
14.3 Threshold Voltage Shift
218(1)
14.4 Generalizations
219(2)
Bibliography 221(16)
Index 237
Sanjiv Sambandan is an assistant professor at the Flexible Electronics Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science. Prior to this, he worked on large-area electronic systems on mechanically flexible substrates at Xerox Palo Alto Research Center.